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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleDMN4800LSSQ-13
Diodes Incorporated
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
EKSPRIME OPSYON
Metòd Peman

DMN4800LSSQ-13 - Diodes Incorporated

Manifakti Nimewo Pati
DMN4800LSSQ-13
Manifakti
Diodes Incorporated
Allelco Nimewo Pati
32D-DMN4800LSSQ-13
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 30V 8.6A 8SO
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
DMN4800LSSQ.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 237510

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon DMN4800LSSQ-13 Tech
Diodes Incorporated - DMN4800LSSQ-13 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Diodes Incorporated - DMN4800LSSQ-13

Pwodwi atribi Valè atribi  
Manifakti Diodes Incorporated  
Vgs (th) (Max) @ Id 1.6V @ 250µA  
Vgs (Max) ±25V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SO  
Seri Automotive, AEC-Q101  
Rds Sou (Max) @ Id, Vgs 14mOhm @ 9A, 10V  
Dissipasyon pouvwa (Max) 1.46W (Ta)  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 798 pF @ 10 V  
Pòtay Charge (Qg) (Max) @ Vgs 8.7 nC @ 5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 8.6A (Ta)  
Nimewo pwodwi baz DMN4800  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Diodes Incorporated DMN4800LSSQ-13.

Pwodwi atribi DMN4800LSSQ-13 DMN53D0LQ-7 DMN53D0L-7 DMN53D0L-13
Nimewo Pati DMN4800LSSQ-13 DMN53D0LQ-7 DMN53D0L-7 DMN53D0L-13
Manifakti Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
FET Feature - - - -
Seri Automotive, AEC-Q101 Automotive, AEC-Q101 - -
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Dissipasyon pouvwa (Max) 1.46W (Ta) 370mW (Ta) 370mW (Ta) 370mW (Ta)
Vgs (Max) ±25V ±20V ±20V ±20V
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Nimewo pwodwi baz DMN4800 DMN53 DMN53 DMN53
Kouran - Kontini Drain (Id) @ 25 ° C 8.6A (Ta) 500mA (Ta) 500mA (Ta) 500mA (Ta)
Pòtay Charge (Qg) (Max) @ Vgs 8.7 nC @ 5 V 0.6 nC @ 4.5 V 0.6 nC @ 4.5 V 0.6 nC @ 4.5 V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Rds Sou (Max) @ Id, Vgs 14mOhm @ 9A, 10V 1.6Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 2.5V, 10V 2.5V, 10V 2.5V, 10V
Kapasite Antre (Ciss) (Max) @ Vds 798 pF @ 10 V 46 pF @ 25 V 46 pF @ 25 V 46 pF @ 25 V
Founisè Aparèy pake 8-SO SOT-23-3 SOT-23-3 SOT-23-3
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Vgs (th) (Max) @ Id 1.6V @ 250µA 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
Drenaj Sous Voltage (Vdss) 30 V 50 V 50 V 50 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pake / Ka 8-SOIC (0.154", 3.90mm Width) TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

DMN4800LSSQ-13 fich PDF

Download DMN4800LSSQ-13 PDF fich ak dokiman Diodes Incorporated pou DMN4800LSSQ-13 - Diodes Incorporated.

Enfòmasyon sou anviwònman an
Diodes Environmental Compliance Cert.pdf
Fich
DMN4800LSSQ.pdf

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Diodes Incorporated

DMN4800LSSQ-13

Diodes Incorporated
32D-DMN4800LSSQ-13

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