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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleFDS5690
Fairchild Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

FDS5690 - Fairchild Semiconductor

Manifakti Nimewo Pati
FDS5690
Manifakti
Fairchild (onsemi)
Allelco Nimewo Pati
32D-FDS5690
ECAD modèl
Pati Deskripsyon
SMALL SIGNAL FIELD-EFFECT TRANSI
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
FDS5690.pdf
Nan stok: 5020

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon FDS5690 Tech
Fairchild Semiconductor - FDS5690 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Fairchild Semiconductor - FDS5690

Pwodwi atribi Valè atribi  
Manifakti Fairchild (onsemi)  
Vgs (th) (Max) @ Id 4V @ 250µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SOIC  
Seri PowerTrench®  
Rds Sou (Max) @ Id, Vgs 28mOhm @ 7A, 10V  
Dissipasyon pouvwa (Max) 2.5W (Ta)  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1107 pF @ 30 V  
Pòtay Charge (Qg) (Max) @ Vgs 32 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 6V, 10V  
Drenaj Sous Voltage (Vdss) 60 V  
Kouran - Kontini Drain (Id) @ 25 ° C 7A (Ta)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Fairchild Semiconductor FDS5690.

Pwodwi atribi FDS5690 FDS5692Z FDS5692Z FDS5680
Nimewo Pati FDS5690 FDS5692Z FDS5692Z FDS5680
Manifakti Fairchild Semiconductor onsemi Fairchild Semiconductor Fairchild Semiconductor
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
FET Feature - - - -
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Kouran - Kontini Drain (Id) @ 25 ° C 7A (Ta) 5.8A (Ta) 5.8A (Ta) 8A (Ta)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kondwi Voltage (Max Rds sou, Min Rds sou) 6V, 10V 4.5V, 10V 4.5V, 10V 6V, 10V
Pakèt Bulk Tape & Reel (TR) Bulk Bulk
Dissipasyon pouvwa (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Drenaj Sous Voltage (Vdss) 60 V 50 V 50 V 60 V
Rds Sou (Max) @ Id, Vgs 28mOhm @ 7A, 10V 24mOhm @ 5.8A, 10V 24mOhm @ 5.8A, 10V 20mOhm @ 8A, 10V
Founisè Aparèy pake 8-SOIC 8-SOIC 8-SOIC 8-SOIC
Pòtay Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 25 nC @ 10 V 25 nC @ 10 V 42 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Vgs (th) (Max) @ Id 4V @ 250µA 3V @ 250µA 3V @ 250µA 4V @ 250µA
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Seri PowerTrench® UltraFET™ UltraFET™ PowerTrench®
Kapasite Antre (Ciss) (Max) @ Vds 1107 pF @ 30 V 1025 pF @ 25 V 1025 pF @ 25 V 1850 pF @ 15 V

Shipment

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Sètifikasyon & Manm

Wè plis
Fairchild Semiconductor

FDS5690

Fairchild Semiconductor
32D-FDS5690

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