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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleFDS6064N7
Fairchild Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

FDS6064N7 - Fairchild Semiconductor

Manifakti Nimewo Pati
FDS6064N7
Manifakti
Fairchild (onsemi)
Allelco Nimewo Pati
32D-FDS6064N7
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 20V 23A 8SO
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
FDS6064N7.pdf
RoHs Status
Nan stok: 3600

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon FDS6064N7 Tech
Fairchild Semiconductor - FDS6064N7 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Fairchild Semiconductor - FDS6064N7

Pwodwi atribi Valè atribi  
Manifakti Fairchild (onsemi)  
Vgs (th) (Max) @ Id 1.5V @ 250µA  
Vgs (Max) ±8V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SO  
Seri PowerTrench®  
Rds Sou (Max) @ Id, Vgs 3.5mOhm @ 23A, 4.5V  
Dissipasyon pouvwa (Max) 3W (Ta)  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 7191 pF @ 10 V  
Pòtay Charge (Qg) (Max) @ Vgs 98 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 1.8V, 4.5V  
Drenaj Sous Voltage (Vdss) 20 V  
Kouran - Kontini Drain (Id) @ 25 ° C 23A (Ta)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Fairchild Semiconductor FDS6064N7.

Pwodwi atribi FDS6064N7 FDS5692Z FDS6064N7 FDS6294
Nimewo Pati FDS6064N7 FDS5692Z FDS6064N7 FDS6294
Manifakti Fairchild Semiconductor Fairchild Semiconductor onsemi Fairchild Semiconductor
Seri PowerTrench® UltraFET™ PowerTrench® PowerTrench®
Kondwi Voltage (Max Rds sou, Min Rds sou) 1.8V, 4.5V 4.5V, 10V 1.8V, 4.5V 4.5V, 10V
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) Exposed Pad 8-SOIC (0.154", 3.90mm Width)
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Vgs (Max) ±8V ±20V ±8V ±20V
Rds Sou (Max) @ Id, Vgs 3.5mOhm @ 23A, 4.5V 24mOhm @ 5.8A, 10V 3.5mOhm @ 23A, 4.5V 11.3mOhm @ 13A, 10V
Kapasite Antre (Ciss) (Max) @ Vds 7191 pF @ 10 V 1025 pF @ 25 V 7191 pF @ 10 V 1205 pF @ 15 V
FET Feature - - - -
Pòtay Charge (Qg) (Max) @ Vgs 98 nC @ 4.5 V 25 nC @ 10 V 98 nC @ 4.5 V 14 nC @ 5 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pakèt Bulk Bulk Tape & Reel (TR) Bulk
Kouran - Kontini Drain (Id) @ 25 ° C 23A (Ta) 5.8A (Ta) 23A (Ta) 13A (Ta)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Drenaj Sous Voltage (Vdss) 20 V 50 V 20 V 30 V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Dissipasyon pouvwa (Max) 3W (Ta) 2.5W (Ta) 3W (Ta) 3W (Ta)
Founisè Aparèy pake 8-SO 8-SOIC 8-SO FLMP 8-SOIC
Vgs (th) (Max) @ Id 1.5V @ 250µA 3V @ 250µA 1.5V @ 250µA 3V @ 250µA

Shipment

Tan livrezon

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Metòd livrezon

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Sètifikasyon & Manm

Wè plis
Fairchild Semiconductor

FDS6064N7

Fairchild Semiconductor
32D-FDS6064N7

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