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KayPwodwi yoDiskresyon semiconductor pwodwiTransistè - IGBTs - SingleHGTP12N60A4
Fairchild Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

HGTP12N60A4 - Fairchild Semiconductor

Manifakti Nimewo Pati
HGTP12N60A4
Manifakti
Fairchild (onsemi)
Allelco Nimewo Pati
32D-HGTP12N60A4
ECAD modèl
Pati Deskripsyon
UFS SERIES N-CH IGBT
Deskripsyon detaye
Pake
TO-220-3
Done fèy
HGTP12N60A4.pdf
RoHs Status
Nan stok: 44630

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon HGTP12N60A4 Tech
Fairchild Semiconductor - HGTP12N60A4 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Fairchild Semiconductor - HGTP12N60A4

Pwodwi atribi Valè atribi  
Manifakti Fairchild (onsemi)  
Voltage - Pèseptè Emitter pann (Max) 600 V  
Vce (sou) (Max) @ Vge, Ic 2.7V @ 15V, 12A  
Kondisyon tès 390V, 12A, 10Ohm, 15V  
Td (sou / sou) @ 25 ° C 17ns/96ns  
Oblije chanje enèji 55µJ (on), 50µJ (off)  
Founisè Aparèy pake TO-220-3  
Seri -  
Pouvwa - Max 167 W  
Pwodwi atribi Valè atribi  
Pake / Ka TO-220-3  
Pakèt Tube  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Kalite Antre Standard  
IGBT Kalite -  
Gate Charge 78 nC  
Kouran - Pèseptè Pulsed (Icm) 96 A  
Kouran - Pèseptè (Ic) (Max) 54 A  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Fairchild Semiconductor HGTP12N60A4.

Pwodwi atribi HGTP12N60A4 HGTG7N60A4 HGTG40N60C3 HGTP10N120BN
Nimewo Pati HGTP12N60A4 HGTG7N60A4 HGTG40N60C3 HGTP10N120BN
Manifakti Fairchild Semiconductor onsemi Harris Corporation onsemi
Pake / Ka TO-220-3 TO-247-3 TO-247-3 TO-220-3
Voltage - Pèseptè Emitter pann (Max) 600 V 600 V 600 V 1200 V
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Kouran - Pèseptè (Ic) (Max) 54 A 34 A 75 A 35 A
Oblije chanje enèji 55µJ (on), 50µJ (off) 55µJ (on), 60µJ (off) 850mJ (on), 1mJ (off) 320µJ (on), 800µJ (off)
Gate Charge 78 nC 37 nC 395 nC 100 nC
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Pakèt Tube Tube Bulk Tube
Seri - - - -
IGBT Kalite - - - NPT
Vce (sou) (Max) @ Vge, Ic 2.7V @ 15V, 12A 2.7V @ 15V, 7A 1.8V @ 15V, 40A 2.7V @ 15V, 10A
Founisè Aparèy pake TO-220-3 TO-247-3 TO-247 TO-220-3
Td (sou / sou) @ 25 ° C 17ns/96ns 11ns/100ns 47ns/185ns 23ns/165ns
Kouran - Pèseptè Pulsed (Icm) 96 A 56 A 300 A 80 A
Pouvwa - Max 167 W 125 W 291 W 298 W
Kalite Antre Standard Standard Standard Standard
Kondisyon tès 390V, 12A, 10Ohm, 15V 390V, 7A, 25Ohm, 15V 480V, 40A, 3Ohm, 15V 960V, 10A, 10Ohm, 15V

Shipment

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

Wè plis
Fairchild Semiconductor

HGTP12N60A4

Fairchild Semiconductor
32D-HGTP12N60A4

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