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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIXFN50N120SIC
IXYS
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IXFN50N120SIC - IXYS

Manifakti Nimewo Pati
IXFN50N120SIC
Manifakti
IXYS Corporation
Allelco Nimewo Pati
32D-IXFN50N120SIC
ECAD modèl
Pati Deskripsyon
SICFET N-CH 1200V 47A SOT227B
Deskripsyon detaye
Pake
SOT-227-4, miniBLOC
Done fèy
IXFN50N120SIC.pdf
RoHs Status
Nan stok: 577

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

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Espesifikasyon

Espesifikasyon IXFN50N120SIC Tech
IXYS - IXFN50N120SIC espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak IXYS - IXFN50N120SIC

Pwodwi atribi Valè atribi  
Manifakti IXYS Corporation  
Vgs (th) (Max) @ Id 2.2V @ 2mA  
Vgs (Max) +20V, -5V  
Teknoloji SiCFET (Silicon Carbide)  
Founisè Aparèy pake SOT-227B  
Seri -  
Rds Sou (Max) @ Id, Vgs 50mOhm @ 40A, 20V  
Dissipasyon pouvwa (Max) -  
Pake / Ka SOT-227-4, miniBLOC  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -40°C ~ 150°C (TJ)  
Mounting Kalite Chassis Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1900 pF @ 1000 V  
Pòtay Charge (Qg) (Max) @ Vgs 100 nC @ 20 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 20V  
Drenaj Sous Voltage (Vdss) 1200 V  
Kouran - Kontini Drain (Id) @ 25 ° C 47A (Tc)  
Nimewo pwodwi baz IXFN50  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou IXYS IXFN50N120SIC.

Pwodwi atribi IXFN50N120SIC IXFN50N80Q2 IXFN48N50 IXFN50N120SK
Nimewo Pati IXFN50N120SIC IXFN50N80Q2 IXFN48N50 IXFN50N120SK
Manifakti IXYS IXYS IXYS IXYS
Dissipasyon pouvwa (Max) - 1135W (Tc) 520W (Tc) -
Vgs (Max) +20V, -5V ±30V ±20V +20V, -5V
Operating Tanperati -40°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -40°C ~ 175°C (TJ)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Kapasite Antre (Ciss) (Max) @ Vds 1900 pF @ 1000 V 13500 pF @ 25 V 8400 pF @ 25 V 1895 pF @ 1000 V
Pòtay Charge (Qg) (Max) @ Vgs 100 nC @ 20 V 260 nC @ 10 V 270 nC @ 10 V 115 nC @ 20 V
Pake / Ka SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC
Kouran - Kontini Drain (Id) @ 25 ° C 47A (Tc) 50A (Tc) 48A (Tc) 48A (Tc)
Vgs (th) (Max) @ Id 2.2V @ 2mA 5.5V @ 8mA 4V @ 8mA 2.8V @ 10mA
FET Feature - - - -
Rds Sou (Max) @ Id, Vgs 50mOhm @ 40A, 20V 160mOhm @ 500mA, 10V 100mOhm @ 500mA, 10V 52mOhm @ 40A, 20V
Mounting Kalite Chassis Mount Chassis Mount Chassis Mount Chassis Mount
Teknoloji SiCFET (Silicon Carbide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) SiCFET (Silicon Carbide)
Nimewo pwodwi baz IXFN50 IXFN50 IXFN48 IXFN50
Founisè Aparèy pake SOT-227B SOT-227B SOT-227B SOT-227B
Drenaj Sous Voltage (Vdss) 1200 V 800 V 500 V 1200 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 20V 10V 10V 20V
Pakèt Tube Tube Tube Tube
Seri - HiPerFET™, Q2 Class HiPerFET™ -

IXFN50N120SIC fich PDF

Download IXFN50N120SIC PDF fich ak dokiman IXYS pou IXFN50N120SIC - IXYS.

Fich
IXFN50N120SIC.pdf

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Sètifikasyon & Manm

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IXYS

IXFN50N120SIC

IXYS
32D-IXFN50N120SIC

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