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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIXFN50N80Q2
IXYS
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IXFN50N80Q2 - IXYS

Manifakti Nimewo Pati
IXFN50N80Q2
Manifakti
IXYS Corporation
Allelco Nimewo Pati
32D-IXFN50N80Q2
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 800V 50A SOT-227B
Deskripsyon detaye
Pake
SOT-227-4, miniBLOC
Done fèy
IXFN50N80Q2.pdf
RoHs Status
Nan stok: 729

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Espesifikasyon

Espesifikasyon IXFN50N80Q2 Tech
IXYS - IXFN50N80Q2 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak IXYS - IXFN50N80Q2

Pwodwi atribi Valè atribi  
Manifakti IXYS Corporation  
Vgs (th) (Max) @ Id 5.5V @ 8mA  
Vgs (Max) ±30V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake SOT-227B  
Seri HiPerFET™, Q2 Class  
Rds Sou (Max) @ Id, Vgs 160mOhm @ 500mA, 10V  
Dissipasyon pouvwa (Max) 1135W (Tc)  
Pake / Ka SOT-227-4, miniBLOC  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Chassis Mount  
Kapasite Antre (Ciss) (Max) @ Vds 13500 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 260 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 800 V  
Kouran - Kontini Drain (Id) @ 25 ° C 50A (Tc)  
Nimewo pwodwi baz IXFN50  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou IXYS IXFN50N80Q2.

Pwodwi atribi IXFN50N80Q2 IXFN52N90P IXFN55N50 IXFN50N120SIC
Nimewo Pati IXFN50N80Q2 IXFN52N90P IXFN55N50 IXFN50N120SIC
Manifakti IXYS IXYS Corporation IXYS IXYS
Kapasite Antre (Ciss) (Max) @ Vds 13500 pF @ 25 V 19000pF @ 25V 9400 pF @ 25 V 1900 pF @ 1000 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) SiCFET (Silicon Carbide)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Pòtay Charge (Qg) (Max) @ Vgs 260 nC @ 10 V 308nC @ 10V 330 nC @ 10 V 100 nC @ 20 V
Drenaj Sous Voltage (Vdss) 800 V 900V 500 V 1200 V
Nimewo pwodwi baz IXFN50 - IXFN55 IXFN50
FET Feature - - - -
Vgs (th) (Max) @ Id 5.5V @ 8mA 6.5V @ 1mA 4.5V @ 8mA 2.2V @ 2mA
Pakèt Tube - Tube Tube
Kouran - Kontini Drain (Id) @ 25 ° C 50A (Tc) 43A (Tc) 55A (Tc) 47A (Tc)
Rds Sou (Max) @ Id, Vgs 160mOhm @ 500mA, 10V 160 mOhm @ 26A, 10V 90mOhm @ 27.5A, 10V 50mOhm @ 40A, 20V
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 20V
Mounting Kalite Chassis Mount Chassis Mount Chassis Mount Chassis Mount
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Dissipasyon pouvwa (Max) 1135W (Tc) 890W (Tc) 625W (Tc) -
Vgs (Max) ±30V ±30V ±20V +20V, -5V
Seri HiPerFET™, Q2 Class Polar™ HiPerFET™ -
Pake / Ka SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC
Founisè Aparèy pake SOT-227B SOT-227B SOT-227B SOT-227B

IXFN50N80Q2 fich PDF

Download IXFN50N80Q2 PDF fich ak dokiman IXYS pou IXFN50N80Q2 - IXYS.

Fich
IXFN50N80Q2.pdf

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Sètifikasyon & Manm

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IXYS

IXFN50N80Q2

IXYS
32D-IXFN50N80Q2

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