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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIXKR40N60C
IXKR40N60C Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IXKR40N60C - IXYS

Manifakti Nimewo Pati
IXKR40N60C
Manifakti
IXYS Corporation
Allelco Nimewo Pati
32D-IXKR40N60C
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 600V 38A ISOPLUS247
Deskripsyon detaye
Pake
TO-247-3
Done fèy
IXKR40N60C.pdf
RoHs Status
Nan stok: 1590

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon IXKR40N60C Tech
IXYS - IXKR40N60C espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak IXYS - IXKR40N60C

Pwodwi atribi Valè atribi  
Manifakti IXYS Corporation  
Vgs (th) (Max) @ Id 3.9V @ 3mA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake ISOPLUS247™  
Seri CoolMOS™  
Rds Sou (Max) @ Id, Vgs 70mOhm @ 25A, 10V  
Dissipasyon pouvwa (Max) -  
Pake / Ka TO-247-3  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Operating Tanperati -40°C ~ 150°C (TJ)  
Mounting Kalite Through Hole  
Pòtay Charge (Qg) (Max) @ Vgs 250 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 600 V  
Kouran - Kontini Drain (Id) @ 25 ° C 38A (Tc)  
Nimewo pwodwi baz IXKR40  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou IXYS IXKR40N60C.

Pwodwi atribi IXKR40N60C IXKR25N80C IXKR47N60C5 IRFR3708TRRPBF
Nimewo Pati IXKR40N60C IXKR25N80C IXKR47N60C5 IRFR3708TRRPBF
Manifakti IXYS IXYS IXYS Infineon Technologies
Kouran - Kontini Drain (Id) @ 25 ° C 38A (Tc) 25A (Tc) 47A (Tc) 61A (Tc)
Dissipasyon pouvwa (Max) - - - 87W (Tc)
Vgs (th) (Max) @ Id 3.9V @ 3mA 4V @ 2mA 3.5V @ 3mA 2V @ 250µA
Drenaj Sous Voltage (Vdss) 600 V 800 V 600 V 30 V
Vgs (Max) ±20V ±20V ±20V ±12V
FET Feature - - - -
Seri CoolMOS™ CoolMOS™ CoolMOS™ HEXFET®
Fèt tip N-Channel N-Channel N-Channel N-Channel
Nimewo pwodwi baz IXKR40 IXKR25 IXKR47 IRFR3708
Founisè Aparèy pake ISOPLUS247™ ISOPLUS247™ ISOPLUS247™ D-Pak
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 2.8V, 10V
Mounting Kalite Through Hole Through Hole Through Hole Surface Mount
Operating Tanperati -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Pòtay Charge (Qg) (Max) @ Vgs 250 nC @ 10 V 355 nC @ 10 V 190 nC @ 10 V 24 nC @ 4.5 V
Pakèt Tube Tube Tube Tape & Reel (TR)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Rds Sou (Max) @ Id, Vgs 70mOhm @ 25A, 10V 150mOhm @ 18A, 10V 45mOhm @ 44A, 10V 12.5mOhm @ 15A, 10V
Pake / Ka TO-247-3 TO-247-3 TO-247-3 TO-252-3, DPak (2 Leads + Tab), SC-63

IXKR40N60C fich PDF

Download IXKR40N60C PDF fich ak dokiman IXYS pou IXKR40N60C - IXYS.

PCN konsepsyon/spesifikasyon
Multiple Devices Material 14/Aug/2020.pdf
Fich
IXKR40N60C.pdf

Shipment

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

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IXKR40N60C Image

IXKR40N60C

IXYS
32D-IXKR40N60C

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