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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayHP8S36TB
Rohm Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

HP8S36TB - Rohm Semiconductor

Manifakti Nimewo Pati
HP8S36TB
Manifakti
LAPIS Technology
Allelco Nimewo Pati
32D-HP8S36TB
ECAD modèl
Pati Deskripsyon
30V NCH+NCH MIDDLE POWER MOSFET,
Deskripsyon detaye
Pake
8-PowerTDFN
Done fèy
HP8S36TB.pdf
RoHs Status
Nan stok: 43710

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon HP8S36TB Tech
Rohm Semiconductor - HP8S36TB espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Rohm Semiconductor - HP8S36TB

Pwodwi atribi Valè atribi  
Manifakti LAPIS Technology  
Vgs (th) (Max) @ Id 2.5V @ 1mA  
Teknoloji -  
Founisè Aparèy pake 8-HSOP  
Seri -  
Rds Sou (Max) @ Id, Vgs 2.4mOhm @ 32A, 10V  
Pouvwa - Max 29W  
Pake / Ka 8-PowerTDFN  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 6100pF @ 15V  
Pòtay Charge (Qg) (Max) @ Vgs 47nC @ 4.5V  
FET Feature -  
Drenaj Sous Voltage (Vdss) 30V  
Kouran - Kontini Drain (Id) @ 25 ° C 27A, 80A  
Konfigirasyon 2 N-Channel (Half Bridge)  
Nimewo pwodwi baz HP8S36  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Rohm Semiconductor HP8S36TB.

Pwodwi atribi HP8S36TB HP8K24TB ECH8601M-C-TL-H UP04878G0L
Nimewo Pati HP8S36TB HP8K24TB ECH8601M-C-TL-H UP04878G0L
Manifakti Rohm Semiconductor Rohm Semiconductor onsemi Panasonic Electronic Components
FET Feature - - Logic Level Gate, 2.5V Drive Logic Level Gate
Teknoloji - MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kouran - Kontini Drain (Id) @ 25 ° C 27A, 80A 15A (Ta), 27A (Tc), 26A (Ta), 80A (Tc) 8A 100mA
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Drenaj Sous Voltage (Vdss) 30V 30V 24V 50V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Pake / Ka 8-PowerTDFN 8-PowerTDFN 8-SMD, Flat Lead SOT-563, SOT-666
Seri - - - -
Vgs (th) (Max) @ Id 2.5V @ 1mA 2.5V @ 1mA - 1.5V @ 1µA
Pouvwa - Max 29W 3W (Ta) 1.5W 125mW
Kapasite Antre (Ciss) (Max) @ Vds 6100pF @ 15V 590pF @ 15V, 2410pF @ 15V - 12pF @ 3V
Rds Sou (Max) @ Id, Vgs 2.4mOhm @ 32A, 10V 8.8mOhm @ 15A, 10V, 3mOhm @ 26A, 10V 23mOhm @ 4A, 4.5V 12Ohm @ 10mA, 4V
Founisè Aparèy pake 8-HSOP 8-HSOP 8-ECH SSMini6-F2
Nimewo pwodwi baz HP8S36 HP8K24 ECH8601 UP04878
Pòtay Charge (Qg) (Max) @ Vgs 47nC @ 4.5V 10nC @ 10V, 36nC @ 10V 7.5nC @ 4.5V -
Konfigirasyon 2 N-Channel (Half Bridge) 2 N-Channel (Dual) Asymmetrical 2 N-Channel (Dual) Common Drain 2 N-Channel (Dual)
Operating Tanperati -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 125°C (TJ)

HP8S36TB fich PDF

Download HP8S36TB PDF fich ak dokiman Rohm Semiconductor pou HP8S36TB - Rohm Semiconductor.

Lòt dokiman ki gen rapò
Transistor, MOSFET Flammability.pdf
Enfòmasyon sou anviwònman an
Transistor Whisker Info.pdf Transistor, MOSFET Level 1 MSL.pdf

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Sètifikasyon & Manm

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Rohm Semiconductor

HP8S36TB

Rohm Semiconductor
32D-HP8S36TB

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