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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleRQ1A070ZPTR
RQ1A070ZPTR Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

RQ1A070ZPTR - Rohm Semiconductor

Manifakti Nimewo Pati
RQ1A070ZPTR
Manifakti
LAPIS Technology
Allelco Nimewo Pati
32D-RQ1A070ZPTR
ECAD modèl
Pati Deskripsyon
MOSFET P-CH 12V 7A TSMT8
Deskripsyon detaye
Pake
8-SMD, Flat Lead
Done fèy
RQ1A070ZPTR.pdf
RoHs Status
Nan stok: 63940

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Kantite

Espesifikasyon

Espesifikasyon RQ1A070ZPTR Tech
Rohm Semiconductor - RQ1A070ZPTR espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Rohm Semiconductor - RQ1A070ZPTR

Pwodwi atribi Valè atribi  
Manifakti LAPIS Technology  
Vgs (th) (Max) @ Id 1V @ 1mA  
Vgs (Max) ±10V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TSMT8  
Seri -  
Rds Sou (Max) @ Id, Vgs 12mOhm @ 7A, 4.5V  
Dissipasyon pouvwa (Max) 700mW (Ta)  
Pake / Ka 8-SMD, Flat Lead  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 7400 pF @ 6 V  
Pòtay Charge (Qg) (Max) @ Vgs 58 nC @ 4.5 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 1.5V, 4.5V  
Drenaj Sous Voltage (Vdss) 12 V  
Kouran - Kontini Drain (Id) @ 25 ° C 7A (Ta)  
Nimewo pwodwi baz RQ1A070  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Rohm Semiconductor RQ1A070ZPTR.

Pwodwi atribi RQ1A070ZPTR RQ1E070RPTR RQ1C075UNTR RQ1A060ZPTR
Nimewo Pati RQ1A070ZPTR RQ1E070RPTR RQ1C075UNTR RQ1A060ZPTR
Manifakti Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor
FET Feature - - - -
Kouran - Kontini Drain (Id) @ 25 ° C 7A (Ta) 7A (Ta) 7.5A (Ta) 6A (Ta)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Seri - - - -
Pòtay Charge (Qg) (Max) @ Vgs 58 nC @ 4.5 V 26 nC @ 5 V 18 nC @ 4.5 V 34 nC @ 4.5 V
Nimewo pwodwi baz RQ1A070 RQ1E070 RQ1C075 RQ1A060
Dissipasyon pouvwa (Max) 700mW (Ta) 550mW (Ta) 700mW (Ta) 700mW (Ta)
Kapasite Antre (Ciss) (Max) @ Vds 7400 pF @ 6 V 2700 pF @ 10 V 1400 pF @ 10 V 2800 pF @ 6 V
Rds Sou (Max) @ Id, Vgs 12mOhm @ 7A, 4.5V 17mOhm @ 7A, 10V 16mOhm @ 7.5A, 4.5V 23mOhm @ 6A, 4.5V
Kondwi Voltage (Max Rds sou, Min Rds sou) 1.5V, 4.5V 4V, 10V 1.5V, 4.5V 1.5V, 4.5V
Vgs (th) (Max) @ Id 1V @ 1mA 2.5V @ 1mA 1V @ 1mA 1V @ 1mA
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Vgs (Max) ±10V ±20V ±10V ±10V
Pake / Ka 8-SMD, Flat Lead 8-SMD, Flat Lead 8-SMD, Flat Lead 8-SMD, Flat Lead
Founisè Aparèy pake TSMT8 TSMT8 TSMT8 TSMT8
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Fèt tip P-Channel P-Channel N-Channel P-Channel
Operating Tanperati 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Drenaj Sous Voltage (Vdss) 12 V 30 V 20 V 12 V

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  1. Telefòn
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Sètifikasyon & Manm

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RQ1A070ZPTR Image

RQ1A070ZPTR

Rohm Semiconductor
32D-RQ1A070ZPTR

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