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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleRQ1C065UNTR
RQ1C065UNTR Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

RQ1C065UNTR - Rohm Semiconductor

Manifakti Nimewo Pati
RQ1C065UNTR
Manifakti
LAPIS Technology
Allelco Nimewo Pati
32D-RQ1C065UNTR
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 20V 6.5A TSMT8
Deskripsyon detaye
Pake
8-SMD, Flat Lead
Done fèy
RQ1C065UNTR.pdf
RoHs Status
Nan stok: 111620

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon RQ1C065UNTR Tech
Rohm Semiconductor - RQ1C065UNTR espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Rohm Semiconductor - RQ1C065UNTR

Pwodwi atribi Valè atribi  
Manifakti LAPIS Technology  
Vgs (th) (Max) @ Id 1V @ 1mA  
Vgs (Max) ±10V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TSMT8  
Seri -  
Rds Sou (Max) @ Id, Vgs 22mOhm @ 6.5A, 4.5V  
Dissipasyon pouvwa (Max) 700mW (Ta)  
Pake / Ka 8-SMD, Flat Lead  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 870 pF @ 10 V  
Pòtay Charge (Qg) (Max) @ Vgs 11 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 1.5V, 4.5V  
Drenaj Sous Voltage (Vdss) 20 V  
Kouran - Kontini Drain (Id) @ 25 ° C 6.5A (Ta)  
Nimewo pwodwi baz RQ1C065  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Rohm Semiconductor RQ1C065UNTR.

Pwodwi atribi RQ1C065UNTR RQ1A070APTR RQ1E050RPTR RQ1A070ZPTR
Nimewo Pati RQ1C065UNTR RQ1A070APTR RQ1E050RPTR RQ1A070ZPTR
Manifakti Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor
Pake / Ka 8-SMD, Flat Lead 8-SMD, Flat Lead 8-SMD, Flat Lead 8-SMD, Flat Lead
Kondwi Voltage (Max Rds sou, Min Rds sou) 1.5V, 4.5V 1.5V, 4.5V 4V, 10V 1.5V, 4.5V
Dissipasyon pouvwa (Max) 700mW (Ta) 550mW (Ta) 700mW (Ta) 700mW (Ta)
Drenaj Sous Voltage (Vdss) 20 V 12 V 30 V 12 V
Vgs (th) (Max) @ Id 1V @ 1mA 1V @ 1mA 2.5V @ 1mA 1V @ 1mA
Pòtay Charge (Qg) (Max) @ Vgs 11 nC @ 4.5 V 80 nC @ 4.5 V 28 nC @ 10 V 58 nC @ 4.5 V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
FET Feature - - - -
Fèt tip N-Channel P-Channel P-Channel P-Channel
Vgs (Max) ±10V -8V ±20V ±10V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Founisè Aparèy pake TSMT8 TSMT8 TSMT8 TSMT8
Kapasite Antre (Ciss) (Max) @ Vds 870 pF @ 10 V 7800 pF @ 6 V 1300 pF @ 10 V 7400 pF @ 6 V
Rds Sou (Max) @ Id, Vgs 22mOhm @ 6.5A, 4.5V 14mOhm @ 7A, 4.5V 31mOhm @ 5A, 10V 12mOhm @ 7A, 4.5V
Nimewo pwodwi baz RQ1C065 RQ1A070 RQ1E050 RQ1A070
Kouran - Kontini Drain (Id) @ 25 ° C 6.5A (Ta) 7A (Ta) 5A (Ta) 7A (Ta)
Operating Tanperati 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Seri - - - -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)

RQ1C065UNTR fich PDF

Download RQ1C065UNTR PDF fich ak dokiman Rohm Semiconductor pou RQ1C065UNTR - Rohm Semiconductor.

Lòt dokiman ki gen rapò
Transistor, MOSFET Flammability.pdf
Enfòmasyon sou anviwònman an
Transistor Whisker Info.pdf Transistor, MOSFET Level 1 MSL.pdf

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Sètifikasyon & Manm

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RQ1C065UNTR Image

RQ1C065UNTR

Rohm Semiconductor
32D-RQ1C065UNTR

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