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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleRSR010N10TL
Rohm Semiconductor
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

RSR010N10TL - Rohm Semiconductor

Manifakti Nimewo Pati
RSR010N10TL
Manifakti
LAPIS Technology
Allelco Nimewo Pati
32D-RSR010N10TL
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 100V 1A TSMT3
Deskripsyon detaye
Pake
SC-96
Done fèy
RSR010N10TL.pdf
RoHs Status
Nan stok: 158490

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon RSR010N10TL Tech
Rohm Semiconductor - RSR010N10TL espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Rohm Semiconductor - RSR010N10TL

Pwodwi atribi Valè atribi  
Manifakti LAPIS Technology  
Vgs (th) (Max) @ Id 2.5V @ 1mA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake TSMT3  
Seri -  
Rds Sou (Max) @ Id, Vgs 520mOhm @ 1A, 10V  
Dissipasyon pouvwa (Max) 540mW (Ta)  
Pake / Ka SC-96  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 140 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 3.5 nC @ 5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4V, 10V  
Drenaj Sous Voltage (Vdss) 100 V  
Kouran - Kontini Drain (Id) @ 25 ° C 1A (Ta)  
Nimewo pwodwi baz RSR010  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Rohm Semiconductor RSR010N10TL.

Pwodwi atribi RSR010N10TL NTTD4401FR2G NDF06N60ZH AOTF8N60
Nimewo Pati RSR010N10TL NTTD4401FR2G NDF06N60ZH AOTF8N60
Manifakti Rohm Semiconductor onsemi Sanyo Alpha & Omega Semiconductor Inc.
Rds Sou (Max) @ Id, Vgs 520mOhm @ 1A, 10V 90mOhm @ 3.3A, 4.5V 1.2Ohm @ 3A, 10V 900mOhm @ 4A, 10V
Pòtay Charge (Qg) (Max) @ Vgs 3.5 nC @ 5 V 18 nC @ 4.5 V 31 nC @ 10 V 35 nC @ 10 V
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tube Tube
Kapasite Antre (Ciss) (Max) @ Vds 140 pF @ 25 V 750 pF @ 16 V 923 pF @ 25 V 1370 pF @ 25 V
Kondwi Voltage (Max Rds sou, Min Rds sou) 4V, 10V 2.5V, 4.5V - 10V
Nimewo pwodwi baz RSR010 NTTD44 - AOTF8
Drenaj Sous Voltage (Vdss) 100 V 20 V 600 V 600 V
Vgs (Max) ±20V ±10V ±30V ±30V
Vgs (th) (Max) @ Id 2.5V @ 1mA 1.5V @ 250µA 4.5V @ 100µA 4.5V @ 250µA
Fèt tip N-Channel P-Channel N-Channel N-Channel
Pake / Ka SC-96 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) TO-220-3 Full Pack TO-220-3 Full Pack
Founisè Aparèy pake TSMT3 8-MSOP TO-220-3 Full Pack TO-220F
Seri - FETKY™ - -
Dissipasyon pouvwa (Max) 540mW (Ta) 780mW (Ta) 31W (Tc) 50W (Tc)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Mounting Kalite Surface Mount Surface Mount Through Hole Through Hole
FET Feature - Schottky Diode (Isolated) - -
Operating Tanperati 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Kouran - Kontini Drain (Id) @ 25 ° C 1A (Ta) 2.4A (Ta) 6A (Tj) 8A (Tc)

RSR010N10TL fich PDF

Download RSR010N10TL PDF fich ak dokiman Rohm Semiconductor pou RSR010N10TL - Rohm Semiconductor.

PCN konsepsyon/spesifikasyon
TSMT Package Updates 24/Dec/2014.pdf

Shipment

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Rohm Semiconductor

RSR010N10TL

Rohm Semiconductor
32D-RSR010N10TL

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