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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArraySH8K32TB1
SH8K32TB1 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SH8K32TB1 - Rohm Semiconductor

Manifakti Nimewo Pati
SH8K32TB1
Manifakti
LAPIS Technology
Allelco Nimewo Pati
32D-SH8K32TB1
ECAD modèl
Pati Deskripsyon
MOSFET 2N-CH 60V 4.5A SOP8
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
SH8K32TB1.pdf
RoHs Status
Nan stok: 35820

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Kantite

Espesifikasyon

Espesifikasyon SH8K32TB1 Tech
Rohm Semiconductor - SH8K32TB1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Rohm Semiconductor - SH8K32TB1

Pwodwi atribi Valè atribi  
Manifakti LAPIS Technology  
Vgs (th) (Max) @ Id 2.5V @ 1mA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SOP (5.0x6.0)  
Seri -  
Rds Sou (Max) @ Id, Vgs 65mOhm @ 4.5A, 10V  
Pouvwa - Max 2W  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 500pF @ 10V  
Pòtay Charge (Qg) (Max) @ Vgs 10nC @ 5V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 60V  
Kouran - Kontini Drain (Id) @ 25 ° C 4.5A  
Konfigirasyon 2 N-Channel (Dual)  
Nimewo pwodwi baz SH8K32  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Rohm Semiconductor SH8K32TB1.

Pwodwi atribi SH8K32TB1 SH8K3TB1 SH8KA2GZETB SH8K5TB1
Nimewo Pati SH8K32TB1 SH8K3TB1 SH8KA2GZETB SH8K5TB1
Manifakti Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor
Rds Sou (Max) @ Id, Vgs 65mOhm @ 4.5A, 10V 24mOhm @ 7A, 10V 28mOhm @ 8A, 10V 83mOhm @ 3.5A, 10V
Seri - - - -
Drenaj Sous Voltage (Vdss) 60V 30V 30V 30V
Founisè Aparèy pake 8-SOP (5.0x6.0) 8-SOP 8-SOP 8-SOP
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Konfigirasyon 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
Nimewo pwodwi baz SH8K32 SH8K3 SH8KA2 SH8K5
Pòtay Charge (Qg) (Max) @ Vgs 10nC @ 5V 11.8nC @ 5V 8nC @ 10V 3.5nC @ 5V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Pouvwa - Max 2W 2W (Ta) 2.8W 2W
Kouran - Kontini Drain (Id) @ 25 ° C 4.5A 7A (Ta) 8A 3.5A
Kapasite Antre (Ciss) (Max) @ Vds 500pF @ 10V 600pF @ 10V 330pF @ 15V 140pF @ 10V
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Vgs (th) (Max) @ Id 2.5V @ 1mA 2.5V @ 1mA 2.5V @ 1mA 2.5V @ 1mA
Operating Tanperati 150°C (TJ) 150°C 150°C (TJ) 150°C (TJ)
FET Feature Logic Level Gate - - Logic Level Gate

Shipment

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  1. Telefòn
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Sètifikasyon & Manm

Wè plis
SH8K32TB1 Image

SH8K32TB1

Rohm Semiconductor
32D-SH8K32TB1

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