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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArraySH8K4TB1
SH8K4TB1 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SH8K4TB1 - Rohm Semiconductor

Manifakti Nimewo Pati
SH8K4TB1
Manifakti
LAPIS Technology
Allelco Nimewo Pati
32D-SH8K4TB1
ECAD modèl
Pati Deskripsyon
MOSFET 2N-CH 30V 9A SOP8
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
SH8K4.pdf
RoHs Status
Nan stok: 45820

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon SH8K4TB1 Tech
Rohm Semiconductor - SH8K4TB1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Rohm Semiconductor - SH8K4TB1

Pwodwi atribi Valè atribi  
Manifakti LAPIS Technology  
Vgs (th) (Max) @ Id 2.5V @ 1mA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 8-SOP  
Seri -  
Rds Sou (Max) @ Id, Vgs 17mOhm @ 9A, 10V  
Pouvwa - Max 2W  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1190pF @ 10V  
Pòtay Charge (Qg) (Max) @ Vgs 21nC @ 5V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 30V  
Kouran - Kontini Drain (Id) @ 25 ° C 9A  
Konfigirasyon 2 N-Channel (Dual)  
Nimewo pwodwi baz SH8K4  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Rohm Semiconductor SH8K4TB1.

Pwodwi atribi SH8K4TB1 SH8K5TB1 SH8K32TB1 SH8K26GZ0TB1
Nimewo Pati SH8K4TB1 SH8K5TB1 SH8K32TB1 SH8K26GZ0TB1
Manifakti Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor
Pòtay Charge (Qg) (Max) @ Vgs 21nC @ 5V 3.5nC @ 5V 10nC @ 5V 2.9nC @ 5V
Pouvwa - Max 2W 2W 2W 2W (Ta)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Konfigirasyon 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
Kouran - Kontini Drain (Id) @ 25 ° C 9A 3.5A 4.5A 6A (Ta)
Seri - - - -
Nimewo pwodwi baz SH8K4 SH8K5 SH8K32 SH8K26
Kapasite Antre (Ciss) (Max) @ Vds 1190pF @ 10V 140pF @ 10V 500pF @ 10V 280pF @ 10V
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Founisè Aparèy pake 8-SOP 8-SOP 8-SOP (5.0x6.0) 8-SOP
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate -
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Rds Sou (Max) @ Id, Vgs 17mOhm @ 9A, 10V 83mOhm @ 3.5A, 10V 65mOhm @ 4.5A, 10V 38mOhm @ 6A, 10V
Drenaj Sous Voltage (Vdss) 30V 30V 60V 40V
Operating Tanperati 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Vgs (th) (Max) @ Id 2.5V @ 1mA 2.5V @ 1mA 2.5V @ 1mA 2.5V @ 1mA

SH8K4TB1 fich PDF

Download SH8K4TB1 PDF fich ak dokiman Rohm Semiconductor pou SH8K4TB1 - Rohm Semiconductor.

Fich
SH8K4.pdf

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Sètifikasyon & Manm

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SH8K4TB1 Image

SH8K4TB1

Rohm Semiconductor
32D-SH8K4TB1

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