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KayPwodwi yoSikit entegre Integrated (ICs)PMIC - Chofè GateISL6612ECB
ISL6612ECB Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

ISL6612ECB - Renesas Electronics America Inc

Manifakti Nimewo Pati
ISL6612ECB
Manifakti
Renesas Electronics Corporation
Allelco Nimewo Pati
32D-ISL6612ECB
ECAD modèl
Pati Deskripsyon
IC GATE DRVR HALF-BRIDGE 8SOIC
Deskripsyon detaye
Pake
8-SOIC (0.154', 3.90mm Width) Exposed Pad
Done fèy
ISL6612ECB.pdf
Nan stok: 7260

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Kantite

Espesifikasyon

Espesifikasyon ISL6612ECB Tech
Renesas Electronics America Inc - ISL6612ECB espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Renesas Electronics America Inc - ISL6612ECB

Pwodwi atribi Valè atribi  
Manifakti Renesas Electronics Corporation  
Voltage - Pwovizyon pou 10.8V ~ 13.2V  
Founisè Aparèy pake 8-SOIC-EP  
Seri -  
Leve / tonbe tan (tip) 26ns, 18ns  
Pake / Ka 8-SOIC (0.154', 3.90mm Width) Exposed Pad  
Pakèt Tube  
Operating Tanperati 0°C ~ 125°C (TJ)  
Kantite chofè 2  
Pwodwi atribi Valè atribi  
Mounting Kalite Surface Mount  
Lojik Voltage - VIL, VIH -  
Kalite Antre Non-Inverting  
Segondè Side Voltage - Max (Bootstrap) 36 V  
Pòt tip N-Channel MOSFET  
Kondwi konte genyen Half-Bridge  
Kouran - Sòti Pik (Sous, Sink) 1.25A, 2A  
Chèn Kalite Synchronous  
Nimewo pwodwi baz ISL6612  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Renesas Electronics America Inc ISL6612ECB.

Pwodwi atribi ISL6612ECB ISL6612CBZA ISL6612EIBZ ISL6613AECBZ
Nimewo Pati ISL6612ECB ISL6612CBZA ISL6612EIBZ ISL6613AECBZ
Manifakti Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Pòt tip N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Voltage - Pwovizyon pou 10.8V ~ 13.2V 10.8V ~ 13.2V 10.8V ~ 13.2V 10.8V ~ 13.2V
Operating Tanperati 0°C ~ 125°C (TJ) 0°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) 0°C ~ 125°C (TJ)
Pake / Ka 8-SOIC (0.154', 3.90mm Width) Exposed Pad 8-SOIC (0.154', 3.90mm Width) 8-SOIC (0.154', 3.90mm Width) Exposed Pad 8-SOIC (0.154', 3.90mm Width) Exposed Pad
Nimewo pwodwi baz ISL6612 ISL6612 ISL6612 ISL6613
Seri - - - -
Kalite Antre Non-Inverting Non-Inverting Non-Inverting Non-Inverting
Leve / tonbe tan (tip) 26ns, 18ns 26ns, 18ns 26ns, 18ns 26ns, 18ns
Segondè Side Voltage - Max (Bootstrap) 36 V 36 V 36 V 36 V
Chèn Kalite Synchronous Synchronous Synchronous Synchronous
Lojik Voltage - VIL, VIH - - - -
Kondwi konte genyen Half-Bridge Half-Bridge Half-Bridge Half-Bridge
Kantite chofè 2 2 2 2
Kouran - Sòti Pik (Sous, Sink) 1.25A, 2A 1.25A, 2A 1.25A, 2A 1.25A, 2A
Pakèt Tube Tube Tube Tube
Founisè Aparèy pake 8-SOIC-EP 8-SOIC 8-SOIC-EP 8-SOIC-EP

ISL6612ECB fich PDF

Download ISL6612ECB PDF fich ak dokiman Renesas Electronics America Inc pou ISL6612ECB - Renesas Electronics America Inc.

PCN anbalaj
2.73KHz.pdf

Shipment

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

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ISL6612ECB Image

ISL6612ECB

Renesas Electronics America Inc
32D-ISL6612ECB

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