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KayPwodwi yoSikit entegre Integrated (ICs)PMIC - Chofè GateISL6613ACRZ
ISL6613ACRZ Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

ISL6613ACRZ - Renesas Electronics America Inc

Manifakti Nimewo Pati
ISL6613ACRZ
Manifakti
Renesas Electronics Corporation
Allelco Nimewo Pati
32D-ISL6613ACRZ
ECAD modèl
Pati Deskripsyon
IC GATE DRVR HALF-BRIDGE 10DFN
Deskripsyon detaye
Pake
10-VFDFN Exposed Pad
Done fèy
ISL6613ACRZ.pdf
RoHs Status
Nan stok: 15690

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Kantite

Espesifikasyon

Espesifikasyon ISL6613ACRZ Tech
Renesas Electronics America Inc - ISL6613ACRZ espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Renesas Electronics America Inc - ISL6613ACRZ

Pwodwi atribi Valè atribi  
Manifakti Renesas Electronics Corporation  
Voltage - Pwovizyon pou 10.8V ~ 13.2V  
Founisè Aparèy pake 10-DFN (3x3)  
Seri -  
Leve / tonbe tan (tip) 26ns, 18ns  
Pake / Ka 10-VFDFN Exposed Pad  
Pakèt Tube  
Operating Tanperati 0°C ~ 125°C (TJ)  
Kantite chofè 2  
Pwodwi atribi Valè atribi  
Mounting Kalite Surface Mount  
Lojik Voltage - VIL, VIH -  
Kalite Antre Non-Inverting  
Segondè Side Voltage - Max (Bootstrap) 36 V  
Pòt tip N-Channel MOSFET  
Kondwi konte genyen Half-Bridge  
Kouran - Sòti Pik (Sous, Sink) 1.25A, 2A  
Chèn Kalite Synchronous  
Nimewo pwodwi baz ISL6613  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Renesas Electronics America Inc ISL6613ACRZ.

Pwodwi atribi ISL6613ACRZ ISL6613BIRZ ISL6613AECBZ ISL6613AEIBZ-T
Nimewo Pati ISL6613ACRZ ISL6613BIRZ ISL6613AECBZ ISL6613AEIBZ-T
Manifakti Renesas Electronics America Inc Intersil Renesas Electronics America Inc Renesas Electronics America Inc
Leve / tonbe tan (tip) 26ns, 18ns 26ns, 18ns 26ns, 18ns 26ns, 18ns
Kalite Antre Non-Inverting Non-Inverting Non-Inverting Non-Inverting
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Nimewo pwodwi baz ISL6613 ISL6613 ISL6613 ISL6613
Operating Tanperati 0°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) 0°C ~ 125°C (TJ) -40°C ~ 125°C (TJ)
Chèn Kalite Synchronous Synchronous Synchronous Synchronous
Pòt tip N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET N-Channel MOSFET
Pakèt Tube Tube Tube Tape & Reel (TR)
Seri - - - -
Pake / Ka 10-VFDFN Exposed Pad 10-VFDFN Exposed Pad 8-SOIC (0.154', 3.90mm Width) Exposed Pad 8-SOIC (0.154', 3.90mm Width) Exposed Pad
Voltage - Pwovizyon pou 10.8V ~ 13.2V 7V ~ 13.2V 10.8V ~ 13.2V 10.8V ~ 13.2V
Kondwi konte genyen Half-Bridge Half-Bridge Half-Bridge Half-Bridge
Segondè Side Voltage - Max (Bootstrap) 36 V 36 V 36 V 36 V
Kantite chofè 2 2 2 2
Kouran - Sòti Pik (Sous, Sink) 1.25A, 2A 1.25A, 2A 1.25A, 2A 1.25A, 2A
Lojik Voltage - VIL, VIH - - - -
Founisè Aparèy pake 10-DFN (3x3) 10-DFN (3x3) 8-SOIC-EP 8-SOIC-EP

ISL6613ACRZ fich PDF

Download ISL6613ACRZ PDF fich ak dokiman Renesas Electronics America Inc pou ISL6613ACRZ - Renesas Electronics America Inc.

PCN anbalaj
2.73KHz.pdf
PCN obsolescence/ eol
Cylindrical Battery Holders.pdf
PCN konsepsyon/spesifikasyon
Cylindrical Battery Holders.pdf

Shipment

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

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ISL6613ACRZ Image

ISL6613ACRZ

Renesas Electronics America Inc
32D-ISL6613ACRZ

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