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KayPwodwi yoDiskresyon semiconductor pwodwiTransistè - IGBTs - SingleSTGB10NC60KDT4
STGB10NC60KDT4 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.
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Metòd Peman

STGB10NC60KDT4 - STMicroelectronics

Manifakti Nimewo Pati
STGB10NC60KDT4
Manifakti
STMicroelectronics
Allelco Nimewo Pati
32D-STGB10NC60KDT4
ECAD modèl
Pati Deskripsyon
IGBT 600V 20A 65W D2PAK
Pake
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Done fèy
STGx10NC60KD.pdf
STGx10NC60KD.pdf
RoHs Status
Sètifikasyon nou an
Nan stok: 38930

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite
EKSPRIME OPSYON
Metòd Peman
Sètifikasyon nou an

Espesifikasyon

Espesifikasyon STGB10NC60KDT4 Tech
STMicroelectronics - STGB10NC60KDT4 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak STMicroelectronics - STGB10NC60KDT4

Pwodwi atribi Valè atribi  
Manifakti STMicroelectronics  
Voltage - Pèseptè Emitter pann (Max) 600 V  
Vce (sou) (Max) @ Vge, Ic 2.5V @ 15V, 5A  
Kondisyon tès 390V, 5A, 10Ohm, 15V  
Td (sou / sou) @ 25 ° C 17ns/72ns  
Oblije chanje enèji 55µJ (on), 85µJ (off)  
Founisè Aparèy pake D2PAK  
Seri PowerMESH™  
Tan rekiperasyon ranvèse (trr) 22 ns  
Pouvwa - Max 65 W  
Pwodwi atribi Valè atribi  
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB  
Pakèt Tape & Reel (TR)  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kalite Antre Standard  
IGBT Kalite -  
Gate Charge 19 nC  
Kouran - Pèseptè Pulsed (Icm) 30 A  
Kouran - Pèseptè (Ic) (Max) 20 A  
Nimewo pwodwi baz STGB10  

Anviwònman & ekspòtasyon klasifikasyon

ATRIBI DESKRIPSYON
RoHs Status
Nivo sansiblite imidite (MSL) 1 (Unlimited)
Rive nan estati REACH Unaffected
ECCN EAR99
HTSUS

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou STMicroelectronics STGB10NC60KDT4.

Pwodwi atribi STGB10NC60KDT4 STGB10NB37LZ STGB15M65DF2 STGB12NB60KDT4
Nimewo Pati STGB10NC60KDT4 STGB10NB37LZ STGB15M65DF2 STGB12NB60KDT4
Manifakti STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Voltage - Pèseptè Emitter pann (Max) 600 V 440 V 650 V 600 V
Tan rekiperasyon ranvèse (trr) 22 ns - 142 ns 80 ns
Pouvwa - Max 65 W 125 W 136 W 125 W
Nimewo pwodwi baz STGB10 STGB10 STGB15 STGB12
Pakèt Tape & Reel (TR) Tube Tape & Reel (TR) Tape & Reel (TR)
Kouran - Pèseptè (Ic) (Max) 20 A 20 A 30 A 30 A
Kalite Antre Standard Standard Standard Standard
Vce (sou) (Max) @ Vge, Ic 2.5V @ 15V, 5A 1.8V @ 4.5V, 10A 2V @ 15V, 15A 2.8V @ 15V, 12A
Kouran - Pèseptè Pulsed (Icm) 30 A 40 A 60 A 60 A
Pake / Ka TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Operating Tanperati -55°C ~ 150°C (TJ) -65°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) 150°C (TJ)
Gate Charge 19 nC 28 nC 45 nC 54 nC
Td (sou / sou) @ 25 ° C 17ns/72ns 1.3µs/8µs 24ns/93ns 25ns/96ns
Founisè Aparèy pake D2PAK D²PAK (TO-263) D²PAK (TO-263) D2PAK
Kondisyon tès 390V, 5A, 10Ohm, 15V 328V, 10A, 1kOhm, 5V 400V, 15A, 12Ohm, 15V 480V, 12A, 10Ohm, 15V
Oblije chanje enèji 55µJ (on), 85µJ (off) 2.4mJ (on), 5mJ (off) 90µJ (on), 450µJ (off) 258µJ (off)
IGBT Kalite - - Trench Field Stop -
Seri PowerMESH™ PowerMESH™ - PowerMESH™

STGB10NC60KDT4 fich PDF

Download STGB10NC60KDT4 PDF fich ak dokiman STMicroelectronics pou STGB10NC60KDT4 - STMicroelectronics.

PCN anbalaj
Box Label Chg 28/Jul/2016.pdf
PCN konsepsyon/spesifikasyon
D2PAK Lead Modification 04/Oct/2013.pdf
Asanble PCN/orijin
D2PAK 22/Jun/2016.pdf
Fich
STGx10NC60KD.pdf
Html fich
STGx10NC60KD.pdf

Shipment

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Sètifikasyon & Manm

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STGB10NC60KDT4 Image

STGB10NC60KDT4

STMicroelectronics
32D-STGB10NC60KDT4

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