Espesifikasyon S4PGHM3_A/I Tech
Vishay General Semiconductor - Diodes Division - S4PGHM3_A/I espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - S4PGHM3_A/I
| Pwodwi atribi | Valè atribi | |
|---|---|---|
| Manifakti | Vishay General Semiconductor – Diodes Division | |
| Voltage - Forward (Vf) (Max) @ Si | 1.1 V @ 4 A | |
| Voltage - DC ranvèse (Vr) (Max) | 400 V | |
| Teknoloji | Standard | |
| Founisè Aparèy pake | TO-277A (SMPC) | |
| Vitès | Standard Recovery >500ns, > 200mA (Io) | |
| Seri | Automotive, AEC-Q101, eSMP® | |
| Tan rekiperasyon ranvèse (trr) | 2.5 µs |
| Pwodwi atribi | Valè atribi | |
|---|---|---|
| Pake / Ka | TO-277, 3-PowerDFN | |
| Pakèt | Tape & Reel (TR) | |
| Operating Tanperati - Junction | -55°C ~ 150°C | |
| Mounting Kalite | Surface Mount | |
| Kouran - Reverse Leakage @ Vr | 10 µA @ 400 V | |
| Kouran - Mwayèn Rectified (Io) | 4A | |
| Kapasite @ Vr, F | 30pF @ 4V, 1MHz | |
| Nimewo pwodwi baz | S4P |
Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division S4PGHM3_A/I.
| Pwodwi atribi |  |
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|---|---|---|---|---|
| Nimewo Pati | S4PGHM3_A/I | S4PJHM3/86A | S4PGHM3/86A | S4PBHM3/86A |
| Manifakti | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
| Founisè Aparèy pake | TO-277A (SMPC) | TO-277A (SMPC) | TO-277A (SMPC) | TO-277A (SMPC) |
| Pake / Ka | TO-277, 3-PowerDFN | TO-277, 3-PowerDFN | TO-277, 3-PowerDFN | TO-277, 3-PowerDFN |
| Vitès | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Kouran - Reverse Leakage @ Vr | 10 µA @ 400 V | 10 µA @ 600 V | 10 µA @ 400 V | 10 µA @ 100 V |
| Pakèt | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Voltage - Forward (Vf) (Max) @ Si | 1.1 V @ 4 A | 1.1 V @ 4 A | 1.1 V @ 4 A | 1.1 V @ 4 A |
| Voltage - DC ranvèse (Vr) (Max) | 400 V | 600 V | 400 V | 100 V |
| Tan rekiperasyon ranvèse (trr) | 2.5 µs | 2.5 µs | 2.5 µs | 2.5 µs |
| Operating Tanperati - Junction | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C |
| Nimewo pwodwi baz | S4P | S4P | S4P | S4P |
| Kapasite @ Vr, F | 30pF @ 4V, 1MHz | 30pF @ 4V, 1MHz | 30pF @ 4V, 1MHz | 30pF @ 4V, 1MHz |
| Kouran - Mwayèn Rectified (Io) | 4A | 4A | 4A | 4A |
| Seri | Automotive, AEC-Q101, eSMP® | eSMP® | eSMP® | eSMP® |
| Mounting Kalite | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Teknoloji | Standard | Standard | Standard | Standard |
Download S4PGHM3_A/I PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou S4PGHM3_A/I - Vishay General Semiconductor - Diodes Division.
S4PJHM3/86AVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 600V 4A TO277AS4PGHM3/86AVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 400V 4A TO277AS4PBHM3/86AVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 100V 4A TO277A
S5A-E3/57TVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 50V 5A DO214ABS4PK-M3/86AVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 800V 4A TO277A
S4P-VH(LF)(SN)JST Sales America Inc.CONN HEADER R/A 4POS 3.96MM
DB2S40600LPanasonic Electronic ComponentsDIODE SCHOTTKY 40V 100MA SC79S4PJHM3_A/HVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 600V 4A TO277A
S4P761APGEQRRBTexas InstrumentsPROTOTYPES4PGHM3_A/HVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 400V 4A TO277AS4PDHM3/86AVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 200V 4A TO277AS4PD-M3/86AVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 200V 4A TO277AS4PB-M3/86AVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 100V 4A TO277A
NRVA4007T3GonsemiDIODE GEN PURP 1KV 1A SMA
BAV21WS-HE3-08Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 200V 250MA SOD323S4PJ-M3/86AVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 600V 4A TO277AS4PDHM3_A/HVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 200V 4A TO277A
PMEG2005AEA,115Nexperia USA Inc.DIODE SCHOTTKY 20V 500MA SOD323| Peyi komen referans tan lojistik | ||
|---|---|---|
| Rejyon | Kanpay | Tan lojistik (jou) |
| Lamerik | Etazini | 5 |
| Brezil | 7 | |
| Lerop | Almay | 5 |
| Wayòm Ini | 4 | |
| Itali | 5 | |
| Oceania | Lostrali | 6 |
| New Zeland | 5 | |
| Lazi | Peyi pwovizwa | 4 |
| Japon | 4 | |
| Mwayennorian | Pèp Izrayèl la | 6 |
| DHL & FedEx Shipment Chaj Referans | |
|---|---|
| Chajman chaj (kg) | Referans DHL (USD $) |
| 0.00kg-1.00kg | USD $ 30.00 - USD $ 60.00 |
| 1.00kg-2.00kg | USD $ 40.00 - USD $ 80.00 |
| 2.00kg-3.00kg | USD $ 50.00 - USD $ 100.00 |
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