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KayPwodwi yoDiskresyon semiconductor pwodwiDiodes - Rèktifikateur - SingleS4PJ-M3/86A
S4PJ-M3/86A Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

S4PJ-M3/86A - Vishay General Semiconductor - Diodes Division

Manifakti Nimewo Pati
S4PJ-M3/86A
Manifakti
Vishay General Semiconductor – Diodes Division
Allelco Nimewo Pati
32D-S4PJ-M3/86A
ECAD modèl
Pati Deskripsyon
DIODE GEN PURP 600V 4A TO277A
Deskripsyon detaye
Pake
TO-277, 3-PowerDFN
Done fèy
S4PB thru S4PM.pdf
RoHs Status
Nan stok: 152760

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Kantite

Espesifikasyon

Espesifikasyon S4PJ-M3/86A Tech
Vishay General Semiconductor - Diodes Division - S4PJ-M3/86A espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay General Semiconductor - Diodes Division - S4PJ-M3/86A

Pwodwi atribi Valè atribi  
Manifakti Vishay General Semiconductor – Diodes Division  
Voltage - Forward (Vf) (Max) @ Si 1.1 V @ 4 A  
Voltage - DC ranvèse (Vr) (Max) 600 V  
Teknoloji Standard  
Founisè Aparèy pake TO-277A (SMPC)  
Vitès Standard Recovery >500ns, > 200mA (Io)  
Seri eSMP®  
Tan rekiperasyon ranvèse (trr) 2.5 µs  
Pwodwi atribi Valè atribi  
Pake / Ka TO-277, 3-PowerDFN  
Pakèt Tape & Reel (TR)  
Operating Tanperati - Junction -55°C ~ 150°C  
Mounting Kalite Surface Mount  
Kouran - Reverse Leakage @ Vr 10 µA @ 600 V  
Kouran - Mwayèn Rectified (Io) 4A  
Kapasite @ Vr, F 30pF @ 4V, 1MHz  
Nimewo pwodwi baz S4P  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay General Semiconductor - Diodes Division S4PJ-M3/86A.

Pwodwi atribi S4PJ-M3/86A 1N2275R SS3P5LHM3/86A S4PK-M3/86A
Nimewo Pati S4PJ-M3/86A 1N2275R SS3P5LHM3/86A S4PK-M3/86A
Manifakti Vishay General Semiconductor - Diodes Division Solid State Inc. Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Founisè Aparèy pake TO-277A (SMPC) DO-5 TO-277A (SMPC) TO-277A (SMPC)
Teknoloji Standard Standard, Reverse Polarity Schottky Standard
Seri eSMP® - eSMP® eSMP®
Vitès Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ Si 1.1 V @ 4 A 1.19 V @ 90 A 600 mV @ 3 A 1.1 V @ 4 A
Tan rekiperasyon ranvèse (trr) 2.5 µs - - 2.5 µs
Voltage - DC ranvèse (Vr) (Max) 600 V 300 V 50 V 800 V
Pakèt Tape & Reel (TR) Box Tape & Reel (TR) Tape & Reel (TR)
Kouran - Reverse Leakage @ Vr 10 µA @ 600 V 10 µA @ 300 V 150 µA @ 50 V 10 µA @ 800 V
Kouran - Mwayèn Rectified (Io) 4A 40A 3A 4A
Pake / Ka TO-277, 3-PowerDFN DO-203AB, DO-5, Stud TO-277, 3-PowerDFN TO-277, 3-PowerDFN
Mounting Kalite Surface Mount Stud Mount Surface Mount Surface Mount
Kapasite @ Vr, F 30pF @ 4V, 1MHz - 80pF @ 4V, 1MHz 30pF @ 4V, 1MHz
Operating Tanperati - Junction -55°C ~ 150°C -65°C ~ 200°C -55°C ~ 150°C -55°C ~ 150°C
Nimewo pwodwi baz S4P - SS3P5 S4P

S4PJ-M3/86A fich PDF

Download S4PJ-M3/86A PDF fich ak dokiman Vishay General Semiconductor - Diodes Division pou S4PJ-M3/86A - Vishay General Semiconductor - Diodes Division.

Fich
S4PB thru S4PM.pdf
Asanble PCN/orijin
Mult Dev A/T Chgs 30/Jun/2021.pdf

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S4PJ-M3/86A Image

S4PJ-M3/86A

Vishay General Semiconductor - Diodes Division
32D-S4PJ-M3/86A

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