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KayPwodwi yoIzolanOptoisolators - Transistor, Photovoltaic SòtiCNY117-1
Vishay Semiconductor Opto Division
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

CNY117-1 - Vishay Semiconductor Opto Division

Manifakti Nimewo Pati
CNY117-1
Manifakti
Vishay Semiconductor - Opto Division
Allelco Nimewo Pati
32D-CNY117-1
ECAD modèl
Pati Deskripsyon
OPTOISO 5KV TRANS W/BASE 6DIP
Deskripsyon detaye
Pake
6-DIP (0.300', 7.62mm)
Done fèy
Cylindrical Battery Holders.pdf
Cylindrical Battery Holders.pdf
RoHs Status
Nan stok: 203740

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon CNY117-1 Tech
Vishay Semiconductor Opto Division - CNY117-1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Semiconductor Opto Division - CNY117-1

Pwodwi atribi Valè atribi  
Manifakti Vishay Semiconductor - Opto Division  
Voltage - Sòti (Max) 70V  
Voltage - Izolasyon 5000Vrms  
Voltage - Forward (Vf) (tip) 1.39V  
Vce Saturation (Max) 400mV  
Vire sou / chanje tan (tip) 3µs, 2.3µs  
Founisè Aparèy pake 6-DIP  
Seri -  
Leve / tonbe tan (tip) 2µs, 2µs  
Pake / Ka 6-DIP (0.300', 7.62mm)  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Kalite Sòti Transistor with Base  
Operating Tanperati -55°C ~ 110°C  
Nimewo Chanèl 1  
Mounting Kalite Through Hole  
Kalite Antre DC  
Kouran Transfè Pwopòsyon (Min) 40% @ 10mA  
Kouran Transfè Pwopòsyon (Max) 80% @ 10mA  
Kouran - Sòti / Chèn 50mA  
Kouran - DC Forward (Si) (Max) 60 mA  
Nimewo pwodwi baz CNY117  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Semiconductor Opto Division CNY117-1.

Pwodwi atribi CNY117-1 CNY117-3X007T CNY117F-2 CNY117-2X006
Nimewo Pati CNY117-1 CNY117-3X007T CNY117F-2 CNY117-2X006
Manifakti Vishay Semiconductor Opto Division Vishay Semiconductor Opto Division Vishay Semiconductor Opto Division Vishay Semiconductor Opto Division
Kouran - DC Forward (Si) (Max) 60 mA 60 mA 60 mA 60 mA
Nimewo pwodwi baz CNY117 CNY117 CNY117 CNY117
Vire sou / chanje tan (tip) 3µs, 2.3µs 3µs, 2.3µs 3µs, 2.3µs 3µs, 2.3µs
Pakèt Tube Tape & Reel (TR) Tube Tube
Kouran Transfè Pwopòsyon (Min) 40% @ 10mA 100% @ 10mA 63% @ 10mA 63% @ 10mA
Voltage - Izolasyon 5000Vrms 5000Vrms 5000Vrms 5000Vrms
Nimewo Chanèl 1 1 1 1
Voltage - Forward (Vf) (tip) 1.39V 1.39V 1.39V 1.39V
Pake / Ka 6-DIP (0.300', 7.62mm) 6-SMD, Gull Wing 6-DIP (0.300", 7.62mm) 6-DIP (0.400", 10.16mm)
Operating Tanperati -55°C ~ 110°C -55°C ~ 110°C -55°C ~ 110°C -55°C ~ 110°C
Vce Saturation (Max) 400mV 400mV 400mV 400mV
Kouran Transfè Pwopòsyon (Max) 80% @ 10mA 200% @ 10mA 125% @ 10mA 125% @ 10mA
Seri - - - -
Kalite Antre DC DC DC DC
Kouran - Sòti / Chèn 50mA 50mA 50mA 50mA
Mounting Kalite Through Hole Surface Mount Through Hole Through Hole
Kalite Sòti Transistor with Base Transistor with Base Transistor Transistor with Base
Founisè Aparèy pake 6-DIP 6-SMD 6-DIP 6-DIP
Leve / tonbe tan (tip) 2µs, 2µs 2µs, 2µs 2µs, 2µs 2µs, 2µs
Voltage - Sòti (Max) 70V 70V 70V 70V

CNY117-1 fich PDF

Download CNY117-1 PDF fich ak dokiman Vishay Semiconductor Opto Division pou CNY117-1 - Vishay Semiconductor Opto Division.

Asanble PCN/orijin
2.73KHz.pdf
Fich
Cylindrical Battery Holders.pdf
Html fich
Cylindrical Battery Holders.pdf

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    +00852 9146 4856

Sètifikasyon & Manm

Wè plis
Vishay Semiconductor Opto Division

CNY117-1

Vishay Semiconductor Opto Division
32D-CNY117-1

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