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KayPwodwi yoIzolanOptoisolators - Transistor, Photovoltaic SòtiCNY117-4X001
Vishay Semiconductor Opto Division
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

CNY117-4X001 - Vishay Semiconductor Opto Division

Manifakti Nimewo Pati
CNY117-4X001
Manifakti
Vishay Semiconductor - Opto Division
Allelco Nimewo Pati
32D-CNY117-4X001
ECAD modèl
Pati Deskripsyon
OPTOISO 5KV TRANS W/BASE 6DIP
Deskripsyon detaye
Pake
6-DIP (0.300", 7.62mm)
Done fèy
CNY117.pdf
CNY117.pdf
RoHs Status
Nan stok: 147100

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon CNY117-4X001 Tech
Vishay Semiconductor Opto Division - CNY117-4X001 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Semiconductor Opto Division - CNY117-4X001

Pwodwi atribi Valè atribi  
Manifakti Vishay Semiconductor - Opto Division  
Voltage - Sòti (Max) 70V  
Voltage - Izolasyon 5000Vrms  
Voltage - Forward (Vf) (tip) 1.39V  
Vce Saturation (Max) 400mV  
Vire sou / chanje tan (tip) 3µs, 2.3µs  
Founisè Aparèy pake 6-DIP  
Seri -  
Leve / tonbe tan (tip) 2µs, 2µs  
Pake / Ka 6-DIP (0.300", 7.62mm)  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Kalite Sòti Transistor with Base  
Operating Tanperati -55°C ~ 110°C  
Nimewo Chanèl 1  
Mounting Kalite Through Hole  
Kalite Antre DC  
Kouran Transfè Pwopòsyon (Min) 160% @ 10mA  
Kouran Transfè Pwopòsyon (Max) 320% @ 10mA  
Kouran - Sòti / Chèn 50mA  
Kouran - DC Forward (Si) (Max) 60 mA  
Nimewo pwodwi baz CNY117  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Semiconductor Opto Division CNY117-4X001.

Pwodwi atribi CNY117-4X001 CNY117-2X007T CNY117F-4 CNY117-2
Nimewo Pati CNY117-4X001 CNY117-2X007T CNY117F-4 CNY117-2
Manifakti Vishay Semiconductor Opto Division Vishay Semiconductor Opto Division Vishay Semiconductor Opto Division Vishay Semiconductor Opto Division
Kouran - Sòti / Chèn 50mA 50mA 50mA 50mA
Seri - - - -
Kouran - DC Forward (Si) (Max) 60 mA 60 mA 60 mA 60 mA
Kouran Transfè Pwopòsyon (Max) 320% @ 10mA 125% @ 10mA 320% @ 10mA 125% @ 10mA
Founisè Aparèy pake 6-DIP 6-SMD 6-DIP 6-DIP
Kouran Transfè Pwopòsyon (Min) 160% @ 10mA 63% @ 10mA 160% @ 10mA 63% @ 10mA
Operating Tanperati -55°C ~ 110°C -55°C ~ 110°C -55°C ~ 110°C -55°C ~ 110°C
Voltage - Sòti (Max) 70V 70V 70V 70V
Voltage - Forward (Vf) (tip) 1.39V 1.39V 1.39V 1.39V
Pakèt Tube Tape & Reel (TR) Tube Tube
Kalite Antre DC DC DC DC
Kalite Sòti Transistor with Base Transistor with Base Transistor Transistor with Base
Nimewo Chanèl 1 1 1 1
Pake / Ka 6-DIP (0.300", 7.62mm) 6-SMD, Gull Wing 6-DIP (0.300", 7.62mm) 6-DIP (0.300", 7.62mm)
Mounting Kalite Through Hole Surface Mount Through Hole Through Hole
Vire sou / chanje tan (tip) 3µs, 2.3µs 3µs, 2.3µs 3µs, 2.3µs 3µs, 2.3µs
Nimewo pwodwi baz CNY117 CNY117 CNY117 CNY117
Vce Saturation (Max) 400mV 400mV 400mV 400mV
Leve / tonbe tan (tip) 2µs, 2µs 2µs, 2µs 2µs, 2µs 2µs, 2µs
Voltage - Izolasyon 5000Vrms 5000Vrms 5000Vrms 5000Vrms

CNY117-4X001 fich PDF

Download CNY117-4X001 PDF fich ak dokiman Vishay Semiconductor Opto Division pou CNY117-4X001 - Vishay Semiconductor Opto Division.

Asanble PCN/orijin
Mold Compound 29/Jul/2019.pdf
Fich
CNY117.pdf
Html fich
CNY117.pdf

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Sètifikasyon & Manm

Wè plis
Vishay Semiconductor Opto Division

CNY117-4X001

Vishay Semiconductor Opto Division
32D-CNY117-4X001

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