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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleSI5484DU-T1-GE3
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SI5484DU-T1-GE3 - Vishay Siliconix

Manifakti Nimewo Pati
SI5484DU-T1-GE3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SI5484DU-T1-GE3
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 20V 12A PPAK
Deskripsyon detaye
Pake
PowerPAK® ChipFET™ Single
Done fèy
SI5484DU.pdf
RoHs Status
Nan stok: 4810

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon SI5484DU-T1-GE3 Tech
Vishay Siliconix - SI5484DU-T1-GE3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SI5484DU-T1-GE3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 2V @ 250µA  
Vgs (Max) ±12V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PowerPAK® ChipFET™ Single  
Seri TrenchFET®  
Rds Sou (Max) @ Id, Vgs 16mOhm @ 7.6A, 4.5V  
Dissipasyon pouvwa (Max) 3.1W (Ta), 31W (Tc)  
Pake / Ka PowerPAK® ChipFET™ Single  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1600 pF @ 10 V  
Pòtay Charge (Qg) (Max) @ Vgs 55 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 4.5V  
Drenaj Sous Voltage (Vdss) 20 V  
Kouran - Kontini Drain (Id) @ 25 ° C 12A (Tc)  
Nimewo pwodwi baz SI5484  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SI5484DU-T1-GE3.

Pwodwi atribi SI5484DU-T1-GE3 SI5475DC-T1-E3 SI5480DU-T1-GE3 SI5486DU-T1-GE3
Nimewo Pati SI5484DU-T1-GE3 SI5475DC-T1-E3 SI5480DU-T1-GE3 SI5486DU-T1-GE3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Kouran - Kontini Drain (Id) @ 25 ° C 12A (Tc) 5.5A (Ta) 12A (Tc) 12A (Tc)
Founisè Aparèy pake PowerPAK® ChipFET™ Single 1206-8 ChipFET™ PowerPAK® ChipFET™ Single PowerPAK® ChipFET™ Single
Pòtay Charge (Qg) (Max) @ Vgs 55 nC @ 10 V 29 nC @ 4.5 V 34 nC @ 10 V 54 nC @ 8 V
Kapasite Antre (Ciss) (Max) @ Vds 1600 pF @ 10 V - 1230 pF @ 15 V 2100 pF @ 10 V
Dissipasyon pouvwa (Max) 3.1W (Ta), 31W (Tc) 1.3W (Ta) 3.1W (Ta), 31W (Tc) 3.1W (Ta), 31W (Tc)
Fèt tip N-Channel P-Channel N-Channel N-Channel
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 4.5V 1.8V, 4.5V 4.5V, 10V 1.8V, 4.5V
FET Feature - - - -
Vgs (th) (Max) @ Id 2V @ 250µA 450mV @ 1mA (Min) 3V @ 250µA 1V @ 250µA
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pake / Ka PowerPAK® ChipFET™ Single 8-SMD, Flat Lead PowerPAK® ChipFET™ Single PowerPAK® ChipFET™ Single
Nimewo pwodwi baz SI5484 SI5475 SI5480 SI5486
Drenaj Sous Voltage (Vdss) 20 V 12 V 30 V 20 V
Rds Sou (Max) @ Id, Vgs 16mOhm @ 7.6A, 4.5V 31mOhm @ 5.5A, 4.5V 16mOhm @ 7.2A, 10V 15mOhm @ 7.7A, 4.5V
Seri TrenchFET® TrenchFET® TrenchFET® TrenchFET®
Vgs (Max) ±12V ±8V ±20V ±8V

SI5484DU-T1-GE3 fich PDF

Download SI5484DU-T1-GE3 PDF fich ak dokiman Vishay Siliconix pou SI5484DU-T1-GE3 - Vishay Siliconix.

Fich
SI5484DU.pdf

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Sètifikasyon & Manm

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Vishay Siliconix

SI5484DU-T1-GE3

Vishay Siliconix
32D-SI5484DU-T1-GE3

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