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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArraySI5504BDC-T1-E3
Vishay Siliconix
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

SI5504BDC-T1-E3 - Vishay Siliconix

Manifakti Nimewo Pati
SI5504BDC-T1-E3
Manifakti
Vishay / Siliconix
Allelco Nimewo Pati
32D-SI5504BDC-T1-E3
ECAD modèl
Pati Deskripsyon
MOSFET N/P-CH 30V 4A 1206-8
Deskripsyon detaye
Pake
8-SMD, Flat Lead
Done fèy
Si5504BDC.pdf
RoHs Status
Nan stok: 76660

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon SI5504BDC-T1-E3 Tech
Vishay Siliconix - SI5504BDC-T1-E3 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Siliconix - SI5504BDC-T1-E3

Pwodwi atribi Valè atribi  
Manifakti Vishay / Siliconix  
Vgs (th) (Max) @ Id 3V @ 250µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 1206-8 ChipFET™  
Seri TrenchFET®  
Rds Sou (Max) @ Id, Vgs 65mOhm @ 3.1A, 10V  
Pouvwa - Max 3.12W, 3.1W  
Pake / Ka 8-SMD, Flat Lead  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 220pF @ 15V  
Pòtay Charge (Qg) (Max) @ Vgs 7nC @ 10V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 30V  
Kouran - Kontini Drain (Id) @ 25 ° C 4A, 3.7A  
Konfigirasyon N and P-Channel  
Nimewo pwodwi baz SI5504  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Siliconix SI5504BDC-T1-E3.

Pwodwi atribi SI5504BDC-T1-E3 SI5504DC-T1-E3 SI5504BDC-T1-GE3 SI5513CDC-T1-GE3
Nimewo Pati SI5504BDC-T1-E3 SI5504DC-T1-E3 SI5504BDC-T1-GE3 SI5513CDC-T1-GE3
Manifakti Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Pake / Ka 8-SMD, Flat Lead 8-SMD, Flat Lead 8-SMD, Flat Lead 8-SMD, Flat Lead
Pouvwa - Max 3.12W, 3.1W 1.1W 3.12W, 3.1W 3.1W
Seri TrenchFET® TrenchFET® TrenchFET® TrenchFET®
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Pòtay Charge (Qg) (Max) @ Vgs 7nC @ 10V 7.5nC @ 10V 7nC @ 10V 4.2nC @ 5V
Drenaj Sous Voltage (Vdss) 30V 30V 30V 20V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kapasite Antre (Ciss) (Max) @ Vds 220pF @ 15V - 220pF @ 15V 285pF @ 10V
Kouran - Kontini Drain (Id) @ 25 ° C 4A, 3.7A 2.9A, 2.1A 4A, 3.7A 4A, 3.7A
Rds Sou (Max) @ Id, Vgs 65mOhm @ 3.1A, 10V 85mOhm @ 2.9A, 10V 65mOhm @ 3.1A, 10V 55mOhm @ 4.4A, 4.5V
Founisè Aparèy pake 1206-8 ChipFET™ 1206-8 ChipFET™ 1206-8 ChipFET™ 1206-8 ChipFET™
Konfigirasyon N and P-Channel N and P-Channel N and P-Channel N and P-Channel
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Vgs (th) (Max) @ Id 3V @ 250µA 1V @ 250µA (Min) 3V @ 250µA 1.5V @ 250µA
Pakèt Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Nimewo pwodwi baz SI5504 SI5504 SI5504 SI5513

SI5504BDC-T1-E3 fich PDF

Download SI5504BDC-T1-E3 PDF fich ak dokiman Vishay Siliconix pou SI5504BDC-T1-E3 - Vishay Siliconix.

Asanble PCN/orijin
New Solder Plating Site 18/Apr/2023.pdf
Enfòmasyon sou anviwònman an
Material Compliance.pdf
Fich
Si5504BDC.pdf
PCN obsolescence/ eol
SI5504BDC-T1-E3,GE3 29/Apr/2016.pdf

Shipment

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Sètifikasyon & Manm

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Vishay Siliconix

SI5504BDC-T1-E3

Vishay Siliconix
32D-SI5504BDC-T1-E3

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