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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleBSO203SP
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

BSO203SP - Infineon Technologies

Manifakti Nimewo Pati
BSO203SP
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-BSO203SP
ECAD modèl
Pati Deskripsyon
P-CHANNEL POWER MOSFET
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
BSO203SP.pdf
Nan stok: 103390

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Espesifikasyon

Espesifikasyon BSO203SP Tech
Infineon Technologies - BSO203SP espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - BSO203SP

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 1.2V @ 50µA  
Vgs (Max) ±12V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-DSO-8  
Seri OptiMOS®  
Rds Sou (Max) @ Id, Vgs 21mOhm @ 8.9A, 4.5V  
Dissipasyon pouvwa (Max) 1.6W (Ta)  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 3750 pF @ 15 V  
Pòtay Charge (Qg) (Max) @ Vgs 39 nC @ 4.5 V  
Fèt tip P-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 4.5V  
Drenaj Sous Voltage (Vdss) 20 V  
Kouran - Kontini Drain (Id) @ 25 ° C 7A (Ta)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies BSO203SP.

Pwodwi atribi BSO203SP BSO200N03S BSO207P H BSO211PH
Nimewo Pati BSO203SP BSO200N03S BSO207P H BSO211PH
Manifakti Infineon Technologies Infineon Technologies Cypress Semiconductor (Infineon Technologies) Infineon Technologies
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Fèt tip P-Channel N-Channel - -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Kondwi Voltage (Max Rds sou, Min Rds sou) 2.5V, 4.5V 4.5V, 10V - -
Vgs (th) (Max) @ Id 1.2V @ 50µA 2V @ 10µA - 1.2V @ 25µA
Pòtay Charge (Qg) (Max) @ Vgs 39 nC @ 4.5 V 6.5 nC @ 5 V - 10nC @ 4.5V
Rds Sou (Max) @ Id, Vgs 21mOhm @ 8.9A, 4.5V 20mOhm @ 8.8A, 10V - 67mOhm @ 4.6A, 4.5V
Drenaj Sous Voltage (Vdss) 20 V 30 V - 20V
Mounting Kalite Surface Mount Surface Mount - Surface Mount
Seri OptiMOS® OptiMOS™ - OptiMOS™ P
Kapasite Antre (Ciss) (Max) @ Vds 3750 pF @ 15 V 840 pF @ 15 V - 1095pF @ 15V
Founisè Aparèy pake PG-DSO-8 PG-DSO-8 - 532-FCBGA (23x23)
Kouran - Kontini Drain (Id) @ 25 ° C 7A (Ta) 7A (Ta) - 4A (Ta)
Pakèt Bulk Tape & Reel (TR) - Bulk
Vgs (Max) ±12V ±20V - -
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) - 532-BFBGA, FCBGA
FET Feature - - - Logic Level Gate, 2.5V Drive
Dissipasyon pouvwa (Max) 1.6W (Ta) 1.56W (Ta) - -

Shipment

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Metòd livrezon

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

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Infineon Technologies

BSO203SP

Infineon Technologies
32D-BSO203SP

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