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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayBSO211P
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

BSO211P - Infineon Technologies

Manifakti Nimewo Pati
BSO211P
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-BSO211P
ECAD modèl
Pati Deskripsyon
P-CHANNEL POWER MOSFET
Deskripsyon detaye
Pake
8-SOIC (0.154", 3.90mm Width)
Done fèy
BSO211P.pdf
Nan stok: 109690

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon BSO211P Tech
Infineon Technologies - BSO211P espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - BSO211P

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 1.2V @ 25µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake PG-DSO-8  
Seri OptiMOS™  
Rds Sou (Max) @ Id, Vgs 67mOhm @ 4.7A, 4.5V  
Pouvwa - Max 2W  
Pake / Ka 8-SOIC (0.154", 3.90mm Width)  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 920pF @ 15V  
Pòtay Charge (Qg) (Max) @ Vgs 23.9nC @ 4.5V  
FET Feature Logic Level Gate  
Drenaj Sous Voltage (Vdss) 20V  
Kouran - Kontini Drain (Id) @ 25 ° C 4.7A  
Konfigirasyon 2 P-Channel (Dual)  
Nimewo pwodwi baz BSO211  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies BSO211P.

Pwodwi atribi BSO211P BSO211PH BSO215C BSO204P
Nimewo Pati BSO211P BSO211PH BSO215C BSO204P
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Cypress Semiconductor (Infineon Technologies)
Kouran - Kontini Drain (Id) @ 25 ° C 4.7A 4A (Ta) 3.7A -
Konfigirasyon 2 P-Channel (Dual) 2 P-Channel (Dual) N and P-Channel -
Mounting Kalite Surface Mount Surface Mount Surface Mount -
Pòtay Charge (Qg) (Max) @ Vgs 23.9nC @ 4.5V 10nC @ 4.5V 11.5nC @ 10V -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Founisè Aparèy pake PG-DSO-8 532-FCBGA (23x23) 8-SO -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Vgs (th) (Max) @ Id 1.2V @ 25µA 1.2V @ 25µA 2V @ 10µA -
Pakèt Bulk Bulk Tape & Reel (TR) -
Drenaj Sous Voltage (Vdss) 20V 20V 20V -
Seri OptiMOS™ OptiMOS™ P SIPMOS® -
FET Feature Logic Level Gate Logic Level Gate, 2.5V Drive Logic Level Gate -
Pouvwa - Max 2W 1.6W (Ta) 2W -
Kapasite Antre (Ciss) (Max) @ Vds 920pF @ 15V 1095pF @ 15V 246pF @ 25V -
Nimewo pwodwi baz BSO211 BSO211 BSO215 -
Rds Sou (Max) @ Id, Vgs 67mOhm @ 4.7A, 4.5V 67mOhm @ 4.6A, 4.5V 100mOhm @ 3.7A, 10V -
Pake / Ka 8-SOIC (0.154", 3.90mm Width) 532-BFBGA, FCBGA 8-SOIC (0.154", 3.90mm Width) -

Shipment

Tan livrezon

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Metòd livrezon

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

Wè plis
Infineon Technologies

BSO211P

Infineon Technologies
32D-BSO211P

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