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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - ArrayBSO211PH
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

BSO211PH - Infineon Technologies

Manifakti Nimewo Pati
BSO211PH
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-BSO211PH
ECAD modèl
Pati Deskripsyon
3.2A, 20V, 0.067OHM, 2-ELEMENT,
Deskripsyon detaye
Pake
532-BFBGA, FCBGA
Done fèy
BSO211PH.pdf
RoHs Status
Nan stok: 150480

Jaden obligatwa yo endike pa yon asterisk (*)
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Kantite

Espesifikasyon

Espesifikasyon BSO211PH Tech
Infineon Technologies - BSO211PH espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - BSO211PH

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 1.2V @ 25µA  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake 532-FCBGA (23x23)  
Seri OptiMOS™ P  
Rds Sou (Max) @ Id, Vgs 67mOhm @ 4.6A, 4.5V  
Pouvwa - Max 1.6W (Ta)  
Pake / Ka 532-BFBGA, FCBGA  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati -55°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 1095pF @ 15V  
Pòtay Charge (Qg) (Max) @ Vgs 10nC @ 4.5V  
FET Feature Logic Level Gate, 2.5V Drive  
Drenaj Sous Voltage (Vdss) 20V  
Kouran - Kontini Drain (Id) @ 25 ° C 4A (Ta)  
Konfigirasyon 2 P-Channel (Dual)  
Nimewo pwodwi baz BSO211  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies BSO211PH.

Pwodwi atribi BSO211PH BSO215C BSO211P BSO211P H
Nimewo Pati BSO211PH BSO215C BSO211P BSO211P H
Manifakti Infineon Technologies Infineon Technologies Infineon Technologies Cypress Semiconductor (Infineon Technologies)
Nimewo pwodwi baz BSO211 BSO215 BSO211 -
Mounting Kalite Surface Mount Surface Mount Surface Mount -
FET Feature Logic Level Gate, 2.5V Drive Logic Level Gate Logic Level Gate -
Kapasite Antre (Ciss) (Max) @ Vds 1095pF @ 15V 246pF @ 25V 920pF @ 15V -
Pouvwa - Max 1.6W (Ta) 2W 2W -
Pakèt Bulk Tape & Reel (TR) Bulk -
Pake / Ka 532-BFBGA, FCBGA 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) -
Pòtay Charge (Qg) (Max) @ Vgs 10nC @ 4.5V 11.5nC @ 10V 23.9nC @ 4.5V -
Drenaj Sous Voltage (Vdss) 20V 20V 20V -
Operating Tanperati -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Vgs (th) (Max) @ Id 1.2V @ 25µA 2V @ 10µA 1.2V @ 25µA -
Seri OptiMOS™ P SIPMOS® OptiMOS™ -
Rds Sou (Max) @ Id, Vgs 67mOhm @ 4.6A, 4.5V 100mOhm @ 3.7A, 10V 67mOhm @ 4.7A, 4.5V -
Kouran - Kontini Drain (Id) @ 25 ° C 4A (Ta) 3.7A 4.7A -
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Konfigirasyon 2 P-Channel (Dual) N and P-Channel 2 P-Channel (Dual) -
Founisè Aparèy pake 532-FCBGA (23x23) 8-SO PG-DSO-8 -

Shipment

Tan livrezon

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Pri livrezon

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Metòd livrezon

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

Wè plis
Infineon Technologies

BSO211PH

Infineon Technologies
32D-BSO211PH

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