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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF6638TR1PBF
Infineon Technologies
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF6638TR1PBF - Infineon Technologies

Manifakti Nimewo Pati
IRF6638TR1PBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF6638TR1PBF
ECAD modèl
Pati Deskripsyon
MOSFET N-CH 30V 25A DIRECTFET
Deskripsyon detaye
Pake
DirectFET™ Isometric MX
Done fèy
IRF6638(TR)PbF.pdf
Nan stok: 4800

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon IRF6638TR1PBF Tech
Infineon Technologies - IRF6638TR1PBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Infineon Technologies - IRF6638TR1PBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 2.35V @ 100µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake DIRECTFET™ MX  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 2.9mOhm @ 25A, 10V  
Dissipasyon pouvwa (Max) 2.8W (Ta), 89W (Tc)  
Pake / Ka DirectFET™ Isometric MX  
Pakèt Tape & Reel (TR)  
Pwodwi atribi Valè atribi  
Operating Tanperati -40°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 3770 pF @ 15 V  
Pòtay Charge (Qg) (Max) @ Vgs 45 nC @ 4.5 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V  
Drenaj Sous Voltage (Vdss) 30 V  
Kouran - Kontini Drain (Id) @ 25 ° C 25A (Ta), 140A (Tc)  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Infineon Technologies IRF6638TR1PBF.

Pwodwi atribi IRF6638TR1PBF IRF6637TRPBF IRF6641TRPBF IRF6638TRPBF
Nimewo Pati IRF6638TR1PBF IRF6637TRPBF IRF6641TRPBF IRF6638TRPBF
Manifakti Infineon Technologies International Rectifier International Rectifier Infineon Technologies
Dissipasyon pouvwa (Max) 2.8W (Ta), 89W (Tc) 2.3W (Ta), 42W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc)
Fèt tip N-Channel N-Channel N-Channel N-Channel
Vgs (th) (Max) @ Id 2.35V @ 100µA 2.35V @ 250µA 4.9V @ 150µA 2.35V @ 100µA
FET Feature - - - -
Pakèt Tape & Reel (TR) Bulk Bulk Tape & Reel (TR)
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Operating Tanperati -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Kapasite Antre (Ciss) (Max) @ Vds 3770 pF @ 15 V 1330 pF @ 15 V 2290 pF @ 25 V 3770 pF @ 15 V
Pake / Ka DirectFET™ Isometric MX DirectFET™ Isometric MP DirectFET™ Isometric MZ DirectFET™ Isometric MX
Pòtay Charge (Qg) (Max) @ Vgs 45 nC @ 4.5 V 17 nC @ 4.5 V 48 nC @ 10 V 45 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V
Seri HEXFET® HEXFET® HEXFET® HEXFET®
Kondwi Voltage (Max Rds sou, Min Rds sou) 4.5V, 10V 4.5V, 10V 10V 4.5V, 10V
Drenaj Sous Voltage (Vdss) 30 V 30 V 200 V 30 V
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Rds Sou (Max) @ Id, Vgs 2.9mOhm @ 25A, 10V 7.7mOhm @ 14A, 10V 59.9mOhm @ 5.5A, 10V 2.9mOhm @ 25A, 10V
Kouran - Kontini Drain (Id) @ 25 ° C 25A (Ta), 140A (Tc) 14A (Ta), 59A (Tc) 4.6A (Ta), 26A (Tc) 25A (Ta), 140A (Tc)
Founisè Aparèy pake DIRECTFET™ MX DIRECTFET™ MP DIRECTFET™ MZ DIRECTFET™ MX

IRF6638TR1PBF fich PDF

Download IRF6638TR1PBF PDF fich ak dokiman Infineon Technologies pou IRF6638TR1PBF - Infineon Technologies.

Lòt dokiman ki gen rapò
IR Part Numbering System.pdf
PCN obsolescence/ eol
Multiple Devices 20/Dec/2013.pdf
Asanble PCN/orijin
DirectFET Backend Wafer Processing 23/Oct/2013.pdf
PCN Lòt
MSL Update 20/Feb/2014.pdf
Fich
IRF6638(TR)PbF.pdf

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IRF6638TR1PBF

Infineon Technologies
32D-IRF6638TR1PBF

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