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KayPwodwi yoDiskresyon semiconductor pwodwiTransistors - FETs, MOSFETs - SingleIRF6641TRPBF
International Rectifier
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

IRF6641TRPBF - International Rectifier

Manifakti Nimewo Pati
IRF6641TRPBF
Manifakti
Infineon Technologies
Allelco Nimewo Pati
32D-IRF6641TRPBF
ECAD modèl
Pati Deskripsyon
IRF6641 - 12V-300V N-CHANNEL POW
Deskripsyon detaye
Pake
DirectFET™ Isometric MZ
Done fèy
IRF6641TRPBF.pdf
Nan stok: 15942

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Kantite

Espesifikasyon

Espesifikasyon IRF6641TRPBF Tech
International Rectifier - IRF6641TRPBF espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak International Rectifier - IRF6641TRPBF

Pwodwi atribi Valè atribi  
Manifakti Infineon Technologies  
Vgs (th) (Max) @ Id 4.9V @ 150µA  
Vgs (Max) ±20V  
Teknoloji MOSFET (Metal Oxide)  
Founisè Aparèy pake DIRECTFET™ MZ  
Seri HEXFET®  
Rds Sou (Max) @ Id, Vgs 59.9mOhm @ 5.5A, 10V  
Dissipasyon pouvwa (Max) 2.8W (Ta), 89W (Tc)  
Pake / Ka DirectFET™ Isometric MZ  
Pakèt Bulk  
Pwodwi atribi Valè atribi  
Operating Tanperati -40°C ~ 150°C (TJ)  
Mounting Kalite Surface Mount  
Kapasite Antre (Ciss) (Max) @ Vds 2290 pF @ 25 V  
Pòtay Charge (Qg) (Max) @ Vgs 48 nC @ 10 V  
Fèt tip N-Channel  
FET Feature -  
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V  
Drenaj Sous Voltage (Vdss) 200 V  
Kouran - Kontini Drain (Id) @ 25 ° C 4.6A (Ta), 26A (Tc)  
Nimewo pwodwi baz IRF6641  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou International Rectifier IRF6641TRPBF.

Pwodwi atribi IRF6641TRPBF IRF6643TR1PBF IRF6644TRPBF IRF6638TR1PBF
Nimewo Pati IRF6641TRPBF IRF6643TR1PBF IRF6644TRPBF IRF6638TR1PBF
Manifakti International Rectifier Infineon Technologies Infineon Technologies Infineon Technologies
Pòtay Charge (Qg) (Max) @ Vgs 48 nC @ 10 V 55 nC @ 10 V 47 nC @ 10 V 45 nC @ 4.5 V
Pake / Ka DirectFET™ Isometric MZ DirectFET™ Isometric MZ DirectFET™ Isometric MN DirectFET™ Isometric MX
Seri HEXFET® HEXFET® HEXFET® HEXFET®
Kapasite Antre (Ciss) (Max) @ Vds 2290 pF @ 25 V 2340 pF @ 25 V 2210 pF @ 25 V 3770 pF @ 15 V
Vgs (th) (Max) @ Id 4.9V @ 150µA 4.9V @ 150µA 4.8V @ 150µA 2.35V @ 100µA
Kouran - Kontini Drain (Id) @ 25 ° C 4.6A (Ta), 26A (Tc) 6.2A (Ta), 35A (Tc) 10.3A (Ta), 60A (Tc) 25A (Ta), 140A (Tc)
Teknoloji MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Kondwi Voltage (Max Rds sou, Min Rds sou) 10V 10V 10V 4.5V, 10V
Rds Sou (Max) @ Id, Vgs 59.9mOhm @ 5.5A, 10V 34.5mOhm @ 7.6A, 10V 13mOhm @ 10.3A, 10V 2.9mOhm @ 25A, 10V
Dissipasyon pouvwa (Max) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc)
FET Feature - - - -
Drenaj Sous Voltage (Vdss) 200 V 150 V 100 V 30 V
Nimewo pwodwi baz IRF6641 - IRF6644 -
Vgs (Max) ±20V ±20V ±20V ±20V
Fèt tip N-Channel N-Channel N-Channel N-Channel
Mounting Kalite Surface Mount Surface Mount Surface Mount Surface Mount
Operating Tanperati -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Pakèt Bulk Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Founisè Aparèy pake DIRECTFET™ MZ DIRECTFET™ MZ DIRECTFET™ MN DIRECTFET™ MX

Shipment

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

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International Rectifier

IRF6641TRPBF

International Rectifier
32D-IRF6641TRPBF

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