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KayPwodwi yoIzolanOptoisolators - Transistor, Photovoltaic SòtiK817P1
K817P1 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

K817P1 - Vishay Semiconductor Opto Division

Manifakti Nimewo Pati
K817P1
Manifakti
Vishay Semiconductor - Opto Division
Allelco Nimewo Pati
32D-K817P1
ECAD modèl
Pati Deskripsyon
OPTOISO 5KV TRANSISTOR 4DIP
Deskripsyon detaye
Pake
4-DIP (0.300', 7.62mm)
Done fèy
K817P1.pdf
RoHs Status
Nan stok: 4390

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon K817P1 Tech
Vishay Semiconductor Opto Division - K817P1 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Semiconductor Opto Division - K817P1

Pwodwi atribi Valè atribi  
Manifakti Vishay Semiconductor - Opto Division  
Voltage - Sòti (Max) 70V  
Voltage - Izolasyon 5000Vrms  
Voltage - Forward (Vf) (tip) 1.25V  
Vce Saturation (Max) 300mV  
Vire sou / chanje tan (tip) 6µs, 5µs  
Founisè Aparèy pake 4-DIP  
Seri -  
Leve / tonbe tan (tip) 3µs, 4.7µs  
Pake / Ka 4-DIP (0.300', 7.62mm)  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Kalite Sòti Transistor  
Operating Tanperati -40°C ~ 100°C  
Nimewo Chanèl 1  
Mounting Kalite Through Hole  
Kalite Antre DC  
Kouran Transfè Pwopòsyon (Min) 40% @ 10mA  
Kouran Transfè Pwopòsyon (Max) 80% @ 10mA  
Kouran - Sòti / Chèn 50mA  
Kouran - DC Forward (Si) (Max) 60 mA  
Nimewo pwodwi baz K817  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Semiconductor Opto Division K817P1.

Pwodwi atribi K817P1 VOS617A-4X001T ISP817CXSM PS2815-4-F3-A
Nimewo Pati K817P1 VOS617A-4X001T ISP817CXSM PS2815-4-F3-A
Manifakti Vishay Semiconductor Opto Division Vishay Semiconductor Opto Division Isocom Components 2004 LTD CEL
Nimewo Chanèl 1 1 1 4
Voltage - Izolasyon 5000Vrms 3750Vrms 5300Vrms 2500Vrms
Vce Saturation (Max) 300mV 400mV 200mV 300mV
Pakèt Tube Tape & Reel (TR) Tube Tape & Reel (TR)
Mounting Kalite Through Hole Surface Mount Surface Mount Surface Mount
Kouran - Sòti / Chèn 50mA 50mA 50mA 40mA
Voltage - Sòti (Max) 70V 80V 80V 40V
Founisè Aparèy pake 4-DIP 4-SSOP - 16-SSOP
Kalite Antre DC DC DC AC, DC
Kouran Transfè Pwopòsyon (Min) 40% @ 10mA 160% @ 5mA 200% @ 5mA 100% @ 1mA
Operating Tanperati -40°C ~ 100°C -55°C ~ 110°C -30°C ~ 100°C -55°C ~ 100°C
Voltage - Forward (Vf) (tip) 1.25V 1.18V 1.2V 1.15V
Seri - - - NEPOC
Nimewo pwodwi baz K817 VOS617 ISP817 -
Kalite Sòti Transistor Transistor Transistor Transistor
Kouran Transfè Pwopòsyon (Max) 80% @ 10mA 320% @ 5mA 400% @ 5mA 400% @ 1mA
Kouran - DC Forward (Si) (Max) 60 mA 50 mA 50 mA 50 mA
Vire sou / chanje tan (tip) 6µs, 5µs 6µs, 4µs - -
Pake / Ka 4-DIP (0.300', 7.62mm) 4-SOIC (0.173", 4.40mm Width) 4-SMD, Gull Wing 16-SOIC (0.173", 4.40mm Width)
Leve / tonbe tan (tip) 3µs, 4.7µs 3µs, 3µs 4µs, 3µs 4µs, 5µs

K817P1 fich PDF

Download K817P1 PDF fich ak dokiman Vishay Semiconductor Opto Division pou K817P1 - Vishay Semiconductor Opto Division.

PCN obsolescence/ eol
Cylindrical Battery Holders.pdf

Shipment

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

Wè plis
K817P1 Image

K817P1

Vishay Semiconductor Opto Division
32D-K817P1

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