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KayPwodwi yoIzolanOptoisolators - Transistor, Photovoltaic SòtiK817P2
K817P2 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

K817P2 - Vishay Semiconductor Opto Division

Manifakti Nimewo Pati
K817P2
Manifakti
Vishay Semiconductor - Opto Division
Allelco Nimewo Pati
32D-K817P2
ECAD modèl
Pati Deskripsyon
OPTOISO 5KV TRANSISTOR 4DIP
Deskripsyon detaye
Pake
4-DIP (0.300', 7.62mm)
Done fèy
K817P2.pdf
RoHs Status
Nan stok: 4740

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon K817P2 Tech
Vishay Semiconductor Opto Division - K817P2 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Semiconductor Opto Division - K817P2

Pwodwi atribi Valè atribi  
Manifakti Vishay Semiconductor - Opto Division  
Voltage - Sòti (Max) 70V  
Voltage - Izolasyon 5000Vrms  
Voltage - Forward (Vf) (tip) 1.25V  
Vce Saturation (Max) 300mV  
Vire sou / chanje tan (tip) 6µs, 5µs  
Founisè Aparèy pake 4-DIP  
Seri -  
Leve / tonbe tan (tip) 3µs, 4.7µs  
Pake / Ka 4-DIP (0.300', 7.62mm)  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Kalite Sòti Transistor  
Operating Tanperati -40°C ~ 100°C  
Nimewo Chanèl 1  
Mounting Kalite Through Hole  
Kalite Antre DC  
Kouran Transfè Pwopòsyon (Min) 63% @ 10mA  
Kouran Transfè Pwopòsyon (Max) 125% @ 10mA  
Kouran - Sòti / Chèn 50mA  
Kouran - DC Forward (Si) (Max) 60 mA  
Nimewo pwodwi baz K817  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Semiconductor Opto Division K817P2.

Pwodwi atribi K817P2 CNY17F2TVM K817P4 PC4H510NIP
Nimewo Pati K817P2 CNY17F2TVM K817P4 PC4H510NIP
Manifakti Vishay Semiconductor Opto Division onsemi Vishay Semiconductor Opto Division Sharp Microelectronics
Voltage - Sòti (Max) 70V 70V 70V 350V
Nimewo pwodwi baz K817 CNY17F2 K817 -
Mounting Kalite Through Hole Through Hole Through Hole Surface Mount
Leve / tonbe tan (tip) 3µs, 4.7µs 4µs, 3.5µs (Max) 3µs, 4.7µs 4µs, 5µs
Kouran - DC Forward (Si) (Max) 60 mA 60 mA 60 mA 50 mA
Kouran - Sòti / Chèn 50mA 50mA 50mA 50mA
Kalite Antre DC DC DC DC
Vire sou / chanje tan (tip) 6µs, 5µs 2µs, 3µs 6µs, 5µs -
Nimewo Chanèl 1 1 1 1
Operating Tanperati -40°C ~ 100°C -40°C ~ 100°C -40°C ~ 100°C -25°C ~ 100°C
Founisè Aparèy pake 4-DIP 6-DIP 4-DIP 4-SOP
Pake / Ka 4-DIP (0.300', 7.62mm) 6-DIP (0.400", 10.16mm) 4-DIP (0.300", 7.62mm) 4-SOIC (0.209', 5.30mm Width)
Vce Saturation (Max) 300mV 400mV 300mV 300mV
Pakèt Tube Tube Tube Tape & Reel (TR)
Kouran Transfè Pwopòsyon (Min) 63% @ 10mA 63% @ 10mA 160% @ 10mA 40% @ 5mA
Seri - - - -
Kalite Sòti Transistor Transistor Transistor Transistor
Kouran Transfè Pwopòsyon (Max) 125% @ 10mA 125% @ 10mA 320% @ 10mA 240% @ 5mA
Voltage - Izolasyon 5000Vrms 4170Vrms 5000Vrms 2500Vrms
Voltage - Forward (Vf) (tip) 1.25V 1.35V 1.25V 1.2V

K817P2 fich PDF

Download K817P2 PDF fich ak dokiman Vishay Semiconductor Opto Division pou K817P2 - Vishay Semiconductor Opto Division.

PCN obsolescence/ eol
Cylindrical Battery Holders.pdf

Shipment

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

Wè plis
K817P2 Image

K817P2

Vishay Semiconductor Opto Division
32D-K817P2

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