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KayPwodwi yoIzolanOptoisolators - Transistor, Photovoltaic SòtiK817P4
K817P4 Image
Imaj ka reprezantasyon.
wè espesifikasyon pou detay pwodwi.

K817P4 - Vishay Semiconductor Opto Division

Manifakti Nimewo Pati
K817P4
Manifakti
Vishay Semiconductor - Opto Division
Allelco Nimewo Pati
32D-K817P4
ECAD modèl
Pati Deskripsyon
OPTOISO 5KV TRANSISTOR 4DIP
Deskripsyon detaye
Pake
4-DIP (0.300", 7.62mm)
Done fèy
K817P4.pdf
RoHs Status
Nan stok: 3820

Jaden obligatwa yo endike pa yon asterisk (*)
Tanpri voye RFQ, nou pral reponn imedyatman.

Kantite

Espesifikasyon

Espesifikasyon K817P4 Tech
Vishay Semiconductor Opto Division - K817P4 espesifikasyon teknik, atribi, paramèt ak pati ki gen espesifikasyon menm jan ak Vishay Semiconductor Opto Division - K817P4

Pwodwi atribi Valè atribi  
Manifakti Vishay Semiconductor - Opto Division  
Voltage - Sòti (Max) 70V  
Voltage - Izolasyon 5000Vrms  
Voltage - Forward (Vf) (tip) 1.25V  
Vce Saturation (Max) 300mV  
Vire sou / chanje tan (tip) 6µs, 5µs  
Founisè Aparèy pake 4-DIP  
Seri -  
Leve / tonbe tan (tip) 3µs, 4.7µs  
Pake / Ka 4-DIP (0.300", 7.62mm)  
Pakèt Tube  
Pwodwi atribi Valè atribi  
Kalite Sòti Transistor  
Operating Tanperati -40°C ~ 100°C  
Nimewo Chanèl 1  
Mounting Kalite Through Hole  
Kalite Antre DC  
Kouran Transfè Pwopòsyon (Min) 160% @ 10mA  
Kouran Transfè Pwopòsyon (Max) 320% @ 10mA  
Kouran - Sòti / Chèn 50mA  
Kouran - DC Forward (Si) (Max) 60 mA  
Nimewo pwodwi baz K817  

Pati ki gen espesifikasyon menm jan an

Twa pati ki sou bò dwat la gen menm espesifikasyon pou Vishay Semiconductor Opto Division K817P4.

Pwodwi atribi K817P4 K817P3 K817P2 K817P7
Nimewo Pati K817P4 K817P3 K817P2 K817P7
Manifakti Vishay Semiconductor Opto Division Vishay Semiconductor Opto Division Vishay Semiconductor Opto Division Vishay Semiconductor Opto Division
Kouran Transfè Pwopòsyon (Max) 320% @ 10mA 200% @ 10mA 125% @ 10mA 160% @ 5mA
Vce Saturation (Max) 300mV 300mV 300mV 300mV
Kouran Transfè Pwopòsyon (Min) 160% @ 10mA 100% @ 10mA 63% @ 10mA 80% @ 5mA
Voltage - Izolasyon 5000Vrms 5000Vrms 5000Vrms 5000Vrms
Voltage - Forward (Vf) (tip) 1.25V 1.25V 1.25V 1.25V
Vire sou / chanje tan (tip) 6µs, 5µs 6µs, 5µs 6µs, 5µs 6µs, 5µs
Kouran - Sòti / Chèn 50mA 50mA 50mA 50mA
Pake / Ka 4-DIP (0.300", 7.62mm) 4-DIP (0.300', 7.62mm) 4-DIP (0.300', 7.62mm) 4-DIP (0.300', 7.62mm)
Mounting Kalite Through Hole Through Hole Through Hole Through Hole
Kouran - DC Forward (Si) (Max) 60 mA 60 mA 60 mA 60 mA
Nimewo Chanèl 1 1 1 1
Pakèt Tube Tube Tube Tube
Leve / tonbe tan (tip) 3µs, 4.7µs 3µs, 4.7µs 3µs, 4.7µs 3µs, 4.7µs
Kalite Sòti Transistor Transistor Transistor Transistor
Founisè Aparèy pake 4-DIP 4-DIP 4-DIP 4-DIP
Seri - - - -
Operating Tanperati -40°C ~ 100°C -40°C ~ 100°C -40°C ~ 100°C -40°C ~ 100°C
Nimewo pwodwi baz K817 K817 K817 K817
Voltage - Sòti (Max) 70V 70V 70V 70V
Kalite Antre DC DC DC DC

K817P4 fich PDF

Download K817P4 PDF fich ak dokiman Vishay Semiconductor Opto Division pou K817P4 - Vishay Semiconductor Opto Division.

PCN obsolescence/ eol
OMV-697-2013-Rev-0 04/Nov/2013.pdf

Shipment

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  1. Telefòn
    +00852 9146 4856

Sètifikasyon & Manm

Wè plis
K817P4 Image

K817P4

Vishay Semiconductor Opto Division
32D-K817P4

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